Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Vandooren, A.
294  Ergebnisse:
englisch X
Personensuche X
?
1

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
?
2

3D Stacked Devices and MOL Innovations for Post-Nanosheet C..:

, In: 2023 International Electron Devices Meeting (IEDM),
Horiguchi, N. ; Mertens, H. ; Chiarella, T.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
3

Ultimate Layer Stacking Technology for High Density Sequent..:

, In: 2023 International Electron Devices Meeting (IEDM),
Radu, I. ; Nguyen, B-Y. ; Chang, C-H.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
4

Molybdenum Nitride as a Scalable and Thermally Stable pWFM ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Arimura, H. ; Brus, S. ; Franco, J.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
?
5

PPAC of sheet-based CFET configurations for 4 track design ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Schuddinck, P. ; Bufler, F. M. ; Xiang, Y.... - p. 365-366 , 2022
Link: https://doi.org/10.1109/..
 
?
6

Low thermal budget PBTI and NBTI reliability solutions for ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; De Marneffe, J.-F.... - p. 30.4.1-30.4.4 , 2022
Link: https://doi.org/10.1109/..
 
?
7

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacki..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vandooren, A. ; Parihar, N. ; Franco, J.... - p. 330-331 , 2022
Link: https://doi.org/10.1109/..
 
?
8

Low-temperature atomic and molecular hydrogen anneals for e..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; de Marneffe, J.-F.... - p. 31.4.1-31.4.4 , 2021
Link: https://doi.org/10.1109/..
 
?
9

Dipole-First Gate Stack as a Scalable and Thermal Budget Fl..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Arimura, H. ; Ragnarsson, L.-A. ; Oniki, Y.... - p. 13.5.1-13.5.4 , 2021
Link: https://doi.org/10.1109/..
 
?
10

3D sequential low temperature top tier devices using dopant..:

, In: 2020 IEEE Symposium on VLSI Technology,
Vandooren, A. ; Wu, Z. ; Parihar, N.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
?
11

Suramin protects against osteoarthritis by increasing tissu..:

Guns, L.-A. ; Kvasnytsia, M. ; Kerckhofs, G....
Osteoarthritis and Cartilage.  25 (2017)  - p. S145-S146 , 2017
Link: https://doi.org/10.1016/..
 
?
12

InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec ..:

Alian, A. ; Mols, Y. ; Bordallo, C. C. M....
Applied Physics Letters.  109 (2016)  24 - p. , 2016
Link: https://doi.org/10.1063/..
 
?
13

Ultimate nano-electronics: New materials and device concept..:

Collaert, N. ; Alian, A. ; Arimura, H....
Microelectronic Engineering.  132 (2015)  - p. 218-225 , 2015
Link: https://doi.org/10.1016/..
 
?
14

Quantitative three-dimensional carrier mapping in nanowire-..:

Schulze, A. ; Hantschel, T. ; Eyben, P....
Ultramicroscopy.  125 (2013)  - p. 18-23 , 2013
Link: https://doi.org/10.1016/..
 
?
15

Analysis of trap-assisted tunneling in vertical Si homo-jun..:

Vandooren, A. ; Leonelli, D. ; Rooyackers, R....
Solid-State Electronics.  83 (2013)  - p. 50-55 , 2013
Link: https://doi.org/10.1016/..
 
1-15