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Applied physics letters / publ. by the American Institute of Physics
1
Universality of electron accumulation at wurtzite c- and a-..:
, In:Exemplare: Zentrale;
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Applied physics letters / publ. by the American Institute of Physics
2
Reduced surface electron accumulation at InN films by ozone..:
, In:Exemplare: Zentrale;
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Physical review / publ. for the American Physical Society by the American Institute of Physics
3
Dielectric function and Van Hove singularities for In-rich ..:
, In:Exemplare:
Zentrale:Magazinturm-E02 15z phy 865 jc/711; Zentrale:Magazin Zs fb 9711
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Physica status solidi
4
The conductivity of Mg-doped InN:
, In:Exemplar:
Zentrale:Magazinturm-E02 15z phy 865 ja/22
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Physica status solidi
5
Surface conductivity of epitaxial InN:
, In:Exemplar:
Zentrale:Magazinturm-E02 15z phy 865 ja/22
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Applied physics letters / publ. by the American Institute of Physics
6
Resonant localized donor state above the conduction band mi..:
, In:Exemplare: Zentrale;
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Applied physics letters / publ. by the American Institute of Physics
7
Growth of cubic InN on r-plane sapphire:
, In:Exemplare: Zentrale;
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Applied physics letters / publ. by the American Institute of Physics
8
Growth of a-plane InN on r-plane sapphire with a GaN buffer..:
, In:Exemplare: Zentrale;
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Physica status solidi
9
Correlation between strain, optical and electrical properti..:
, In:Exemplar:
Zentrale:Magazinturm-E02 15z phy 865 ja/22
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International journal of production research / Institution of Production Engineers ; American Institute of Industrial Engineers ; Society of Manufacturing Engineers
10
Distributed knowledge sharing for collaborative product dev..:
, In:Exemplare: Zentrale;