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2024 IEEE International Reliability Physics Symposium (IRPS) ,
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Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs..:
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
2
Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand..:
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Lecture Notes in Electrical Engineering; Proceedings of SIE 2023 ,
3
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Mo..:
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2023 IEEE International Reliability Physics Symposium (IRPS) ,
4
High- Temperature PBTI in Trench-Gate Vertical GaN Power MO..:
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22nd Wind and Solar Integration Workshop (WIW 2023) ,
5
Developing support service to ENTSO-E: including the impact..:
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2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) ,
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Analysis and Design of a Fully-Integrated Pulsed LiDAR Driv..:
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2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) ,
9
Cross-sectional SEM-EBIC analysis of semi-vertical GaN powe..:
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Wohlbefinden und Gesundheit im Jugendalter ,
11
It's a Family Affair: Family Health and Child Well-being:
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Education in & with Robotics to Foster 21st-Century Skills; Studies in Computational Intelligence ,
12
Edù, a Robotic Companion in Pediatric Protective Isolation ..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
13
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Po..:
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Education in & with Robotics to Foster 21st-Century Skills; Studies in Computational Intelligence ,
14
Development of a Robotic Agent for Increasing Elderlies Soc..:
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2020 IEEE International Reliability Physics Symposium (IRPS) ,
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