Ciabattini, A
11  Ergebnisse:
Personensuche X
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1

Dual Gate HEMT: Compact Cascode for Low-Noise Amplification:

, In: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM),
 
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2

InP/GaInP Composite-Collector for Improved Breakdown Voltag..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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3

94 GHz Two-Way-Combined Power Amplifiers with 14.2 dBm Peak..:

, In: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM),
 
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4

G-Band Load-Pull Characterization of High-Efficiency Emitte..:

, In: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM),
 
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5

THz InP/GaAsSb DHBTs with Record fAVG=800 GHz: Characteriza..:

, In: 2023 International Electron Devices Meeting (IEDM),
Arabhavi, A.M. ; Deng, M. ; Ciabattini, F.... - p. 1-4 , 2023
 
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6

Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Cla..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
 
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7

Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emi..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Ciabattini, F. ; Arabhavi, A. M. ; Hamzeloui, S.... - p. 24-27 , 2023
 
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8

InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Bolognesi, C. R. ; Arabhavi, A. M. ; Hersent, R.... - p. 112-119 , 2022
 
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9

Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Hamzeloui, S. ; Ciabattini, F. ; Arabhavi, A. M.... - p. 108-111 , 2022
 
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10

Demonstration of 300-nm InP/GaInAsSb DHBT MMIC Technology i..:

, In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC),
 
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11

InP/GaAsSb Double Heterojunction Bipolar Transistor Technol..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Arabhavi, A.M. ; Ciabattini, F. ; Hamzeloui, S.... - p. 11.4.1-11.4.4 , 2021
 
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