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Horiguchi, N.
52  Ergebnisse:
Buchkapitel (Online) X
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1

Forksheet Field-Effect Transistors for Area Scaling and Gat..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mertens, H. ; Horiguchi, N. - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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2

CMOS Scaling by Nanosheet Device Architectures and Backside..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Horiguchi, N. ; Mertens, H. ; Ritzenthaler, R.... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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3

Towards Improved Nanosheet-Based Complementary Field Effect..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Chiarella, T. ; Matagne, P. ; Mertens, H.... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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4

Side and Corner Region Non-Uniformities in Grown SiO2 and T..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Bastos, J. P. ; O'Sullivan, B. J. ; Higashi, Y.... - p. P36.PI-1-P36.PI-7 , 2024
Link: https://doi.org/10.1109/..
 
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5

3D Stacked Devices and MOL Innovations for Post-Nanosheet C..:

, In: 2023 International Electron Devices Meeting (IEDM),
Horiguchi, N. ; Mertens, H. ; Chiarella, T.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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6

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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7

Nanosheet-based Complementary Field-Effect Transistors (CFE..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Mertens, H. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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8

Impact of Backside Power Delivery Network with Buried Power..:

, In: 2023 45th Annual EOS/ESD Symposium (EOS/ESD),
Serbulova, K. ; Chen, S.-H. ; Hellings, G.... - p. 1-6 , 2023
Link: https://doi.org/10.23919..
 
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9

Nanosheet-based Device Architectures with Front/Backside Co..:

, In: 2023 21st International Workshop on Junction Technology (IWJT),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 1-5 , 2023
Link: https://doi.org/10.23919..
 
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10

Backside Power Delivery: Game Changer and Key Enabler of Ad..:

, In: 2023 International Electron Devices Meeting (IEDM),
Veloso, A. ; Vermeersch, B. ; Chen, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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11

Novel Low Thermal Budget CMOS RMG: Performance and Reliabil..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Franco, J. ; Arimura, H. ; de Marneffe, J.-F.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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12

Integration of a Stacked Contact MOL for Monolithic CFET:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vega-Gonzalez, Victor ; Radisic, D. ; Chan, Bt... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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13

Ultimate Layer Stacking Technology for High Density Sequent..:

, In: 2023 International Electron Devices Meeting (IEDM),
Radu, I. ; Nguyen, B-Y. ; Chang, C-H.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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14

Molybdenum Nitride as a Scalable and Thermally Stable pWFM ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Arimura, H. ; Brus, S. ; Franco, J.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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15

Insights into Scaled Logic Devices Connected from Both Wafe..:

, In: 2022 International Electron Devices Meeting (IEDM),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 23.3.1-23.3.4 , 2022
Link: https://doi.org/10.1109/..
 
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