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2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) ,
1
Influence of Fin Configurations on the GaN HEMTs under High..:
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2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ,
2
GaN Tunneling Hot Electron Transistors with UID-GaN/AlN Emi..:
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2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ,
3
MBE-Regrowth Ohmics in AlN/GaN HEMTs with the Rc of 0.09 Ω·..:
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2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ,
4
Influence of Upper Channel Layer Thickness on Traps in Doub..:
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2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ,
5
A Graded-Gate Structure of AlN/GaN HEMT for High-Linearity ..:
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2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ,
6
A Novel Regrown Ohmic Contact Technique to Improve the Perf..:
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2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ,
7
Gate leakage mechanisms of AlN/GaN High electron mobility t..:
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Proceedings of The 7th ACM SIGGRAPH International Conference on Virtual-Reality Continuum and Its Applications in Industry ,
8
Occlusion registration in video-based augmented reality:
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2015 International Conference on Smart and Sustainable City and Big Data (ICSSC) ,
9
The research and design of the web page information system ..:
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