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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
1
15.4 A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TO..:
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2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) ,
2
Effects of Channel Thickness on DC/RF Performance of InAlGa..:
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2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) ,
3
U-MRAM PUF: A Novel Unipolar-MRAM for Power and Area Effici..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
4
Design of High-RA STT-MRAM for Future Energy-Efficient In-M..:
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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
5
U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0..:
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Mobile Communication in Asia: Local Insights, Global Implications; Mobile Communication and Online Falsehoods in Asia ,
6
Turning MIMS from a Curse into a Blessing: Tripartite Partn..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
7
Structure and Performance Co-optimization for the Developme..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
9
GaN on Si RF performance with different AlGaN back barrier:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
10
A 4K–400K Wide Operating-Temperature-Range MRAM Technology ..:
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2022 International Electron Devices Meeting (IEDM) ,
11
Highly Reliable, Scalable, and High-Yield HfZrOx FRAM by Ba..:
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2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
12
The thermal stability improvement of spin-orbit-torque (SOT..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
13
In-Memory Annealing Unit (IMAU): Energy-Efficient (2000 TOP..:
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2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
14
Low-environmental-interference & highly-sensitive TMR biose..:
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2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
15