Noguchi, H.
32  Ergebnisse:
Personensuche X
?
1

On-site transceiver calibration via constrained adaptive mu..:

, In: 49th European Conference on Optical Communications (ECOC 2023),
Sato, M. ; Arikawa, M. ; Noguchi, H.... - p. None , 2023
 
?
2

Magnetic-Particulate Recording Media: Advanced:

, In: Encyclopedia of Smart Materials,
Noguchi, H. ; Oyanagi, M. ; Doshita, H.. - p. 800-806 , 2022
 
?
3

Magnetic-Particulate Recording Media: Advanced:

, In: Reference Module in Materials Science and Materials Engineering,
 
?
4

Formulation of aqueous inkjet ink:

, In: Digital Printing of Textiles,
 
?
5

Formulation of aqueous inkjet ink:

, In: Digital Printing of Textiles,
Noguchi, H. ; Shirota, K. - p. 233-251 , 2006
 
?
6

Mechanism of thermopower maximum of Bi-Sb semiconducting al..:

, In: ICT 2005. 24th International Conference on Thermoelectrics, 2005.,
Itoh, M. ; Kitagawa, H. ; Kodama, T.... - p. 197,198,199,200 , 2005
 
?
7

Commissioning Observations in 2022 with 100-GHz MKID Camera..:

, In: 2023 XXXVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS),
Honda, S. ; Nagai, M. ; Murayama, Y.... - p. 1-4 , 2023
 
?
8

Pixel Pitch Hybrid Bonding and Three Layer Stacking Technol..:

, In: 2022 IEEE International Interconnect Technology Conference (IITC),
Tanida, K. ; Suzuki, S. ; Seo, T.... - p. 5-7 , 2022
 
?
9

25 nm iPMA-type Hexa-MTJ with solder reflow capability and ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Honjo, H. ; Nishioka, K. ; Miura, S.... - p. 10.3.1-10.3.4 , 2022
 
?
10

Gate Oxide Instability against a Wide Range of Negative Ele..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Noguchi, M. ; Koyama, A. ; Iwamatsu, T... - p. 36.3.1-36.3.4 , 2021
 
?
11

Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-..:

, In: 2020 IEEE Symposium on VLSI Circuits,
Natsui, M. ; Tamakoshi, A. ; Honjo, H.... - p. 1-2 , 2020
 
?
12

Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with..:

, In: 2020 IEEE Symposium on VLSI Technology,
Miura, S. ; Nishioka, K. ; Naganuma, H.... - p. 1-2 , 2020
 
?
13

Contributors:

, In: Cellular Migration and Formation of Axons and Dendrites,
Beaubien, François ; Bielle, Franck ; Bradke, Frank... - p. xvii-xviii , 2020
 
?
14

Effect of Intermetallic Compound Growth on Electromigration..:

, In: 2019 IEEE 69th Electronic Components and Technology Conference (ECTC),
Madanipour, H. ; Kim, Y.R. ; Kim, Choong-Un... - p. 1316-1323 , 2019
 
?
15

Improvement in the Channel Performance and NBTI of SiC-MOSF..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Noguchi, M. ; Iwamatsu, T. ; Amishiro, H.... - p. 20.4.1-20.4.1 , 2019
 
1-15