Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
O'Sullivan, B
61  Ergebnisse:
Buchkapitel (Online) X
Personensuche X
?
1

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
O'Sullivan, B. J. ; Alian, A. ; Sibaja-Hernandez, A.... - p. 1-9 , 2024
Link: https://doi.org/10.1109/..
 
?
2

Side and Corner Region Non-Uniformities in Grown SiO2 and T..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Bastos, J. P. ; O'Sullivan, B. J. ; Higashi, Y.... - p. P36.PI-1-P36.PI-7 , 2024
Link: https://doi.org/10.1109/..
 
?
3

Backside Power Delivery: Game Changer and Key Enabler of Ad..:

, In: 2023 International Electron Devices Meeting (IEDM),
Veloso, A. ; Vermeersch, B. ; Chen, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
4

Accelerated dark current degradation study of monolithicall..:

, In: 49th European Conference on Optical Communications (ECOC 2023),
Hsieh, P.-Y. ; Panda, D. P. ; Tsiara, A.... - p. None , 2023
Link: https://doi.org/10.1049/..
 
?
5

High Performance mm Wave AlN/GaN MISHEMTs on 200 mm Si Subs..:

, In: 2023 International Electron Devices Meeting (IEDM),
Yadav, S. ; Alian, A. ; ElKashlan, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
6

III-V/III-N technologies for next generation high-capacity ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 11.5.1-11.5.4 , 2022
Link: https://doi.org/10.1109/..
 
?
7

Trap-polarization interaction during low-field trap charact..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Truijen, B. ; O'Sullivan, B. ; Alam, Md Nur K.... - p. P12-1-P12-4 , 2022
Link: https://doi.org/10.1109/..
 
?
8

Insights into Scaled Logic Devices Connected from Both Wafe..:

, In: 2022 International Electron Devices Meeting (IEDM),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 23.3.1-23.3.4 , 2022
Link: https://doi.org/10.1109/..
 
?
9

Modelling ultra-fast threshold voltage instabilities in Hf-..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
O'Sullivan, B. J. ; Truijen, B. ; Putcha, V.... - p. 4A.4-1-4A.4-8 , 2022
Link: https://doi.org/10.1109/..
 
?
10

Scaled FinFETs Connected by Using Both Wafer Sides for Rout..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Veloso, A. ; Jourdain, A. ; Radisic, D.... - p. 284-285 , 2022
Link: https://doi.org/10.1109/..
 
?
11

STT-MRAM array performance improvement through optimization..:

, In: 2021 IEEE International Memory Workshop (IMW),
Rao, S. ; Kim, W. ; van Beek, S.... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
?
12

CV Stretch-Out Correction after Bias Temperature Stress: Wo..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Grasser, T. ; O'Sullivan, B. ; Kaczer, B.... - p. 1-6 , 2021
Link: https://doi.org/10.1109/..
 
?
13

The Mysterious Bipolar Bias Temperature Stress from the Per..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Grasser, T. ; Kaczer, B. ; O'Sullivan, B.... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
?
14

Impact of Fin Height on Bias Temperature Instability of Mem..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Boubaaya, M. ; Benaceur-Doumaz, D. ; Ferhat Hamida, A.... - p. 1-5 , 2019
Link: https://doi.org/10.1109/..
 
?
15

Impact of Charge trapping on Imprint and its Recovery in Hf..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Higashi, Y. ; Di Piazza, L. ; Suzuki, M.... - p. 15.6.1-15.6.4 , 2019
Link: https://doi.org/10.1109/..
 
1-15