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2024 IEEE International Solid-State Circuits Conference (ISSCC) ,
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13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Pow..:
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2022 International Electron Devices Meeting (IEDM) ,
2
3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Se..:
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2022 13th International Conference on Information and Communication Technology Convergence (ICTC) ,
3
Performance Evaluation of 100 Gb/s 16-QAM Alamouti-coded Op..:
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2022 IEEE International Solid- State Circuits Conference (ISSCC) ,
4
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibra..:
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2023 International Electron Devices Meeting (IEDM) ,
5
Sustainable Environmental Technologies for Advanced Semicon..:
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2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) ,
6
Novel method for NCF flow simulation in HBM thermal compres..:
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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
7
22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarte..:
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2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ,
8
TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor..:
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ICC 2023 - IEEE International Conference on Communications ,
9
Extending the LOS Coverage of Vehicular Networks Based on R..:
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GLOBECOM 2022 - 2022 IEEE Global Communications Conference ,
10
Modeling of Correlated Blockage in Highway Vehicular Networ..:
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Periodic Mesoporous Organosilicas; Springer Series in Materials Science ,
12
PMOs for Separation:
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Periodic Mesoporous Organosilicas; Springer Series in Materials Science ,
14
Synthetic Routes and New Precursors for the Preparation of ..:
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Periodic Mesoporous Organosilicas; Springer Series in Materials Science ,
15