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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
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Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand..:
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2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
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Novel Topology with Continuous Switching to Comprehensively..:
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2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ,
3
Comprehensive Investigation of the Switching Stability in S..:
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2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ,
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Silicon Nitride-induced Threshold Voltage Shift in p-GaN HE..:
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2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ,
5
Robust Forward Gate Bias TDDB Stability in Enhancement-mode..:
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Springer Series in Geomechanics and Geoengineering; Proceedings of the International Field Exploration and Development Conference 2023 ,
6
Liquid Leakage Model in Plunger Lift:
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2019 4th International Conference on Power and Renewable Energy (ICPRE) ,
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Recent Advances in Research on Low Temperature Lithium Ion ..:
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Proceedings of the 2018 2nd International Conference on Education and E-Learning ,
9
The Driving Factors for Fans' Buying Behaviors and Perceive..:
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Springer Series in Geomechanics and Geoengineering; Proceedings of the International Field Exploration and Development Conference 2023 ,
12
Study on Expansion Mechanism and Displacement Efficiency of..:
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2023 IEEE 98th Vehicular Technology Conference (VTC2023-Fall) ,
13
Performance Study for Handoff Strategies in Low-Earth-Orbit..:
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2023 International Applied Computational Electromagnetics Society Symposium (ACES-China) ,
14
An Improved SBR-PTD Method for EM Scattering from Moving Ta..:
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Proceedings of the 2023 6th International Conference on Electronics, Communications and Control Engineering ,
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