Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Vandooren, A.
16  Ergebnisse:
Buchkapitel (Online) X
Personensuche X
?
1

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
?
2

3D Stacked Devices and MOL Innovations for Post-Nanosheet C..:

, In: 2023 International Electron Devices Meeting (IEDM),
Horiguchi, N. ; Mertens, H. ; Chiarella, T.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
3

Ultimate Layer Stacking Technology for High Density Sequent..:

, In: 2023 International Electron Devices Meeting (IEDM),
Radu, I. ; Nguyen, B-Y. ; Chang, C-H.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
4

Molybdenum Nitride as a Scalable and Thermally Stable pWFM ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Arimura, H. ; Brus, S. ; Franco, J.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
?
5

PPAC of sheet-based CFET configurations for 4 track design ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Schuddinck, P. ; Bufler, F. M. ; Xiang, Y.... - p. 365-366 , 2022
Link: https://doi.org/10.1109/..
 
?
6

Low thermal budget PBTI and NBTI reliability solutions for ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; De Marneffe, J.-F.... - p. 30.4.1-30.4.4 , 2022
Link: https://doi.org/10.1109/..
 
?
7

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacki..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vandooren, A. ; Parihar, N. ; Franco, J.... - p. 330-331 , 2022
Link: https://doi.org/10.1109/..
 
?
8

Low-temperature atomic and molecular hydrogen anneals for e..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; de Marneffe, J.-F.... - p. 31.4.1-31.4.4 , 2021
Link: https://doi.org/10.1109/..
 
?
9

Dipole-First Gate Stack as a Scalable and Thermal Budget Fl..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Arimura, H. ; Ragnarsson, L.-A. ; Oniki, Y.... - p. 13.5.1-13.5.4 , 2021
Link: https://doi.org/10.1109/..
 
?
10

3D sequential low temperature top tier devices using dopant..:

, In: 2020 IEEE Symposium on VLSI Technology,
Vandooren, A. ; Wu, Z. ; Parihar, N.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
?
11

Fully-depleted SOI CMOS technology using WXN metal gate and..:

, In: ESSDERC 2007 - 37th European Solid State Device Research Conference,
Aime, D. ; Gassilloud, R. ; Martin, F.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
?
12

Fully-depleted SOI technology using high-k and single-metal..:

, In: 2007 IEEE International Electron Devices Meeting,
Fenouillet-Beranger, C. ; Todeschini, J. ; Le-Denmat, J.C.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
?
13

25nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Sta..:

, In: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.,
Deleonibus, S. ; Mazure, C. ; Gaud, P.... - p. 134-135 , 2006
Link: https://doi.org/10.1109/..
 
?
14

Finfet with isolated n+ and p+ gate regions strapped with m..:

, In: 2003 IEEE International Conference on SOI,
Mathew, L. ; Sadd, M. ; White, B.E.... - p. 109-110 , 2003
Link: https://doi.org/10.1109/..
 
?
15

Enabling UTBB Strained SOI Platform for Co-integration of L..:

, In: 2020 IEEE Symposium on VLSI Technology,
Sun, Chen ; Liang, Jie ; Xu, Haiwen... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
1-15