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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
1
10 A/950 V switching of GaN-channel HFETs with non-doped Al..:
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2023 Asia-Pacific Microwave Conference (APMC) ,
2
Demonstration of a Millimeter-wave High-Power Transceiver M..:
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2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) ,
3
Modeling of Hot-Via Technology for System-in-Package at Mil..:
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2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe) ,
4
Study on the Optimization of the Common Source Inductance f..:
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2021 Device Research Conference (DRC) ,
5
GaN-channel HEMTs with AlN buffer for high-voltage switchin:
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2019 IEEE Energy Conversion Congress and Exposition (ECCE) ,
6
Impact of Substrate Termination on Dynamic On-State Charact..:
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2012 24th International Symposium on Power Semiconductor Devices and ICs ,
7
Impact of buffer composition on the dynamic on-state resist..:
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2006 IEEE MTT-S International Microwave Symposium Digest ,
8
A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier:
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