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2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) ,
1
Investigation of AIGaN/GaN MISHEMTs with Varied AIGaN Barri..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
2
Effect of O2 plasma surface treatment on gate leakage curre..:
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Sustainability in Energy and Buildings; Smart Innovation, Systems and Technologies ,
3
Solar Home System with Peak-Shaving Function and Smart Cont..:
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2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) ,
4
Effect of Passivation on BEOL-Compatible Oxide Semiconducto..:
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2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) ,
5
Effects of Channel Thickness on DC/RF Performance of InAlGa..:
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2023 International Electron Devices Meeting (IEDM) ,
6
Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin..:
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2023 IEEE Automatic Speech Recognition and Understanding Workshop (ASRU) ,
7
Evaluating Self-Supervised Speech Models on a Taiwanese Hok..:
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2023 Asia-Pacific Microwave Conference (APMC) ,
8
Dual-Polarized Dipole Array Antenna with Tilt Angle for Sub..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
9
GaN on Si RF performance with different AlGaN back barrier:
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2022 International Electron Devices Meeting (IEDM) ,
10
Highly Reliable, Scalable, and High-Yield HfZrOx FRAM by Ba..:
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2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
11
AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resis..:
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2022 International Electron Devices Meeting (IEDM) ,
12
Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5 Z..:
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2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
13
Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacit..:
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2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
14
An 8kb spin-orbit-torque magnetic random-access memory:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
15