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202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII) ,
2
Strengthened ESD Reliability of HV nLDMOSs with Embedded Ho..:
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2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) ,
3
Improving the ESD Robustness of an Ultra-high Voltage nLDMO..:
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2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) ,
4
A Novel SCR-based Schottky Diode and Lightly P-well Additio..:
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2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) ,
5
ESD-capability Influences of UHV Circular nLDMOS Transistor..:
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202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII) ,
7
ESD-ability of Circular nLDMOS Transistors of UHV by Super-..:
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202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII) ,
8
ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by..:
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2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW) ,
9
ESD-Reliability Investigation 1of an UHV Elliptical LDMOS-S..:
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2019 IEEE 8th Global Conference on Consumer Electronics (GCCE) ,
10
ESD Immunity Impacts of the Drain-Side Heterojunction Devic..:
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2019 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE) ,
11
The Impact of Drift-region Length Reduction of nLDMOS on ES..:
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2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW) ,
12
Channel- & Drift Region's STI-Lengths Impacts of ESD Immuni..:
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2019 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE) ,
14
ESD-Immunity Influence of Ultra-high Voltage nLDMOS as the ..:
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2019 IEEE 8th Global Conference on Consumer Electronics (GCCE) ,
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