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Müssig, H.-J.
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1

Physica status solidi 

Volume 55, Number 2: October 16  Physica status solidi ; Volume 55, Number 2, A
Amelinckx, S ; Antonopoulos, J. G ; Appel, F... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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2

Physica status solidi 

Volume 69, Number 1: January 16  Physica status solidi ; Volume 69, Number 1, A
Aarna, H. A ; Abdelmohsen, N ; Abdullaeva, S. G... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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3

The role of the HfO2–TiN interface in capacitance–voltage n..:

Wenger, Ch. ; Lukosius, M. ; Weidner, G....
Thin Solid Films.  517 (2009)  23 - p. 6334-6336 , 2009
Link: https://doi.org/10.1016/..
 
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4

Hf- and Zr-based alkaline earth perovskite dielectrics for ..:

Łupina, G. ; Seifarth, O. ; Kozłowski, G....
Microelectronic Engineering.  86 (2009)  7-9 - p. 1842-1844 , 2009
Link: https://doi.org/10.1016/..
 
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5

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O..:

Giussani, A. ; Rodenbach, P. ; Zaumseil, P....
Journal of Applied Physics.  105 (2009)  3 - p. , 2009
Link: https://doi.org/10.1063/..
 
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6

Publisher's Note: "Atomically smooth and single crystalline..:

Giussani, A. ; Rodenbach, P. ; Zaumseil, P....
Journal of Applied Physics.  105 (2009)  12 - p. 129905 , 2009
Link: https://doi.org/10.1063/..
 
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7

Dielectric constant and leakage of BaZrO3 films:

Łupina, G. ; Dąbrowski, J. ; Dudek, P....
Applied Physics Letters.  94 (2009)  15 - p. , 2009
Link: https://doi.org/10.1063/..
 
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8

Dielectric properties of single crystalline PrO2(111)/Si(11..:

Seifarth, O. ; Walczyk, Ch. ; Lupina, G....
Journal of Applied Physics.  106 (2009)  10 - p. , 2009
Link: https://doi.org/10.1063/..
 
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9

Pulse-induced low-power resistive switching in HfO2 metal-i..:

Walczyk, Ch. ; Wenger, Ch. ; Sohal, R....
Journal of Applied Physics.  105 (2009)  11 - p. , 2009
Link: https://doi.org/10.1063/..
 
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10

Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate..:

Wenger, Ch. ; Lukosius, M. ; Costina, I....
Microelectronic Engineering.  85 (2008)  8 - p. 1762-1765 , 2008
Link: https://doi.org/10.1016/..
 
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11

Thin BaHfO3 high-k dielectric layers on TiN for memory capa..:

Lupina, G. ; Kozłowski, G. ; Dabrowski, J....
Applied Physics Letters.  92 (2008)  6 - p. , 2008
Link: https://doi.org/10.1063/..
 
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12

Microscopic model for the nonlinear behavior of high-k meta..:

Wenger, Ch. ; Lupina, G. ; Lukosius, M....
Journal of Applied Physics.  103 (2008)  10 - p. , 2008
Link: https://doi.org/10.1063/..
 
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13

Lattice engineering of dielectric heterostructures on Si by..:

Schroeder, T. ; Costina, I. ; Storck, P....
Journal of Applied Physics.  103 (2008)  8 - p. , 2008
Link: https://doi.org/10.1063/..
 
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14

The influence of lattice oxygen on the initial growth behav..:

Giussani, A. ; Seifarth, O. ; Rodenbach, P....
Journal of Applied Physics.  103 (2008)  8 - p. , 2008
Link: https://doi.org/10.1063/..
 
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15

Dielectric and structural properties of thin SrHfO3 layers ..:

Lupina, G. ; Kozłowski, G. ; Dabrowski, J....
Applied Physics Letters.  93 (2008)  25 - p. , 2008
Link: https://doi.org/10.1063/..
 
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