E-LIB Suche - Ergebnisse für: Ambacher, Oliver

1

Understanding Interfaces in AlScN/GaN Heterostructures:

Streicher, Isabel ; Leone, Stefano ; Zhang, Meiling...
Advanced Functional Materials. , 2024

Link: https://doi.org/10.1002/..

2

Influence of growth temperature on the properties of alumin..:

Sundarapandian, Balasubramanian ; Yassine, Ali ; Kirste, Lutz...
Journal of Applied Physics. 134 (2023) 18 - p. , 2023

Link: https://doi.org/10.1063/..

3

Defect Location in Laterally Aligned Tin Oxide Nanowires: T..:

Bürger, Jasmin-Clara ; Gutsch, Sebastian ; Wollersen, Vanessa...
The Journal of Physical Chemistry C. 127 (2023) 22 - p. 10871-10877 , 2023

Link: https://doi.org/10.1021/..

4

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostru..:

Streicher, Isabel ; Leone, Stefano ; Manz, Christian...
Crystal Growth & Design. 23 (2023) 2 - p. 782-791 , 2023

Link: https://doi.org/10.1021/..

5

Power Module Design for GaN Transistors Enabling High Switc..:

Wöhrle, Dennis ; Burger, Bruno ; Ambacher, Oliver
Energy Technology. 11 (2023) 12 - p. , 2023

Link: https://doi.org/10.1002/..

6

On the origin of the turn-on voltage drop of GaN-based curr..:

Döring, Philipp ; Sinnwell, Matthias ; Reiner, Richard...
Journal of Applied Physics. 131 (2022) 11 - p. , 2022

Link: https://doi.org/10.1063/..

7

A Scalable Small-Signal and Noise Model for High-Electron-M..:

Heinz, Felix ; Thome, Fabian ; Schwantuschke, Dirk..
IEEE Transactions on Microwave Theory and Techniques. 70 (2022) 2 - p. 1097-1110 , 2022

Link: https://doi.org/10.1109/..

8

Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficie..:

Langer, Julia ; Cimalla, Volker ; Lebedev, Vadim...
physica status solidi (a). 219 (2022) 10 - p. , 2022

Link: https://doi.org/10.1002/..

9

Enhanced AlScN/GaN Heterostructures Grown with a Novel Prec..:

Streicher, Isabel ; Leone, Stefano ; Kirste, Lutz...
physica status solidi (RRL) – Rapid Research Letters. 17 (2022) 2 - p. , 2022

Link: https://doi.org/10.1002/..

10

Leakage mechanism in Alx Ga1−x N/GaN heterostructures with ..:

Köhler, Klaus ; Pletschen, Wilfried ; Kirste, Lutz...
Semiconductor Science and Technology. 37 (2022) 2 - p. 025016 , 2022

Link: https://doi.org/10.1088/..

11

On the exceptional temperature stability of ferroelectric A..:

Islam, Md. Redwanul ; Wolff, Niklas ; Yassine, Mohamed...
Applied Physics Letters. 118 (2021) 23 - p. , 2021

Link: https://doi.org/10.1063/..

12

Quality Assessment of In Situ Plasma‐Etched Diamond Surface..:

Langer, Julia ; Cimalla, Volker ; Prescher, Mario...
physica status solidi (a). 218 (2021) 11 - p. , 2021

Link: https://doi.org/10.1002/..

13

Low-Power Differential Input to Single-Ended Output GaN RF-..:

Weis, Markus ; Friesicke, Christian ; Quay, Rudiger.
IEEE Transactions on Microwave Theory and Techniques. 69 (2021) 3 - p. 1646-1653 , 2021

Link: https://doi.org/10.1109/..

14

Improved AlScN/GaN heterostructures grown by metal-organic ..:

Manz, Christian ; Leone, Stefano ; Kirste, Lutz...
Semiconductor Science and Technology. 36 (2021) 3 - p. 034003 , 2021

Link: https://doi.org/10.1088/..

15

Monolithic Integrated AlGaN/GaN Power Converter Topologies ..:

Moench, Stefan ; Müller, Stefan ; Reiner, Richard...
physica status solidi (a). 218 (2021) 3 - p. , 2021

Link: https://doi.org/10.1002/..