E-LIB Suche - Ergebnisse für: Beister, G.

1

Comparison of surface and bulk contributions to non-radiati..:

Beister, G ; Wenzel, H
Semiconductor Science and Technology. 19 (2004) 3 - p. 494-500 , 2004

Link: https://doi.org/10.1088/..

2

Defect recognition via longitudinal mode analysis of high p..:

Klehr, A. ; Beister, G. ; Erbert, G....
Journal of Applied Physics. 90 (2001) 1 - p. 43-47 , 2001

Link: https://doi.org/10.1063/..

3

Beam quality of high power 800 nm broad-area laser diodes w..:

Hülsewede, R. ; Sebastian, J. ; Wenzel, H....
Optics Communications. 192 (2001) 1-2 - p. 69-75 , 2001

Link: https://doi.org/10.1016/..

4

MOVPE growth of AlGaAs/GaInP diode lasers:

Bugge, F. ; Knauer, A. ; Gramlich, S....
Journal of Electronic Materials. 29 (2000) 1 - p. 57-61 , 2000

Link: https://doi.org/10.1007/..

5

Non-radiative current in InGaAs/AlGaAs laser diodes as a me..:

Beister, G. ; Maege, J. ; Erbert, G..
Solid-State Electronics. 42 (1998) 11 - p. 1939-1945 , 1998

Link: https://doi.org/10.1016/..

6

Simple method for examining sulphur passivation of facets i..:

Beister, G. ; Maege, J. ; Gutsche, D....
Applied Physics Letters. 68 (1996) 18 - p. 2467-2468 , 1996

Link: https://doi.org/10.1063/..

7

Power hysteresis and waveguide bistability of stripe quantu..:

Eliseev, P G ; Beister, G ; Drakin, A E...
Quantum Electronics. 25 (1995) 4 - p. 291-301 , 1995

Link: https://doi.org/10.1070/..

8

Threshold drop of the differential resistance of stripe qua..:

Eliseev, P G ; Maege, J ; Erbert, G.
Quantum Electronics. 25 (1995) 2 - p. 99-101 , 1995

Link: https://doi.org/10.1070/..

9

Progress in large-area glass coatings by high-rate sputteri..:

Beister, G
Surface and Coatings Technology. 76-77 (1995) - p. 776-785 , 1995

Link: https://doi.org/10.1016/..

10

Potential sources of degradation in InGaAs/GaAs laser diode:

Rechenberg, I. ; Beister, G. ; Bugge, F....
Materials Science and Engineering: B. 28 (1994) 1-3 - p. 310-313 , 1994

Link: https://doi.org/10.1016/..

11

Effect of growth interruption on performance of AlGaAs/InGa..:

Bugge, F. ; Beister, G. ; Erbert, G....
Journal of Crystal Growth. 145 (1994) 1-4 - p. 907-910 , 1994

Link: https://doi.org/10.1016/..

12

Numerical modelling of carrier profiles in isotype and anis..:

Pittroff, W. ; Bach, H.G. ; Beister, G.
Solid-State Electronics. 35 (1992) 6 - p. 815-820 , 1992

Link: https://doi.org/10.1016/..

13

Evaluation of electroluminescence current and voltage depen..:

Beister, G.
Solid-State Electronics. 34 (1991) 11 - p. 1255-1262 , 1991

Link: https://doi.org/10.1016/..

14

On the numerical simulation of C-V measurements at isotype ..:

Pittroff, W. ; Bach, H.G. ; Beister, G.
Microelectronic Engineering. 15 (1991) 1-4 - p. 597-600 , 1991

Link: https://doi.org/10.1016/..

15

Interface reactions in LPE grown InGaAsP/InP ridge waveguid..:

Beister, G. ; Maege, J. ; Richter, G..
Solid-State Electronics. 34 (1991) 8 - p. 883-888 , 1991

Link: https://doi.org/10.1016/..