Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Chevtchenko, Serguei
11  Ergebnisse:
Artikel (Online) X
Personensuche X
?
1

Investigation of Traps Impact on PAE and Linearity of AlGaN..:

Beleniotis, Petros ; Zervos, Christos ; Krause, Sascha...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3582-3589 , 2024
Link: https://doi.org/10.1109/..
 
?
2

Highly Robust GaN Power Amplifier at Millimeter-Wave Freque..:

Tsao, Yi-Fan ; Chiu, Ping-Hsun ; Chevtchenko, Serguei...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6244-6249 , 2023
Link: https://doi.org/10.1109/..
 
?
3

Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT ..:

Krishnaji Rao, Megha ; Doerner, Ralf ; Chevtchenko, Serguei A...
IEEE Microwave and Wireless Technology Letters.  33 (2023)  10 - p. 1446-1449 , 2023
Link: https://doi.org/10.1109/..
 
?
4

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a).  220 (2023)  16 - p. , 2023
Link: https://doi.org/10.1002/..
 
?
5

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transi..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Brunner, Frank..
physica status solidi (a).  219 (2022)  8 - p. , 2022
Link: https://doi.org/10.1002/..
 
?
6

Threshold voltage shift induced by intrinsic stress in gate..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Ostermay, Ina.
Semiconductor Science and Technology.  36 (2021)  5 - p. 055018 , 2021
Link: https://doi.org/10.1088/..
 
?
7

Terahertz emission from biased AlGaN/GaN high-electron-mobi..:

Lisauskas, Alvydas ; Rämer, Adam ; Burakevič, Marek...
Journal of Applied Physics.  125 (2019)  15 - p. , 2019
Link: https://doi.org/10.1063/..
 
?
8

Effect of buffer thickness on DC and microwave performance ..:

Chevtchenko, Serguei A. ; Brunner, Frank ; Würfl, Joachim.
physica status solidi (a).  207 (2010)  6 - p. 1505-1508 , 2010
Link: https://doi.org/10.1002/..
 
?
9

Defect reduction in GaN epilayers grown by metal-organic ch..:

Xie, Jinqiao ; Chevtchenko, Serguei A. ; Özgür, Ümit.
Applied Physics Letters.  90 (2007)  26 - p. , 2007
Link: https://doi.org/10.1063/..
 
?
10

I-V characteristics of Au∕Ni Schottky diodes on GaN with Si..:

Xie, Jinqiao ; Fu, Yi ; Ni, Xianfeng..
Applied Physics Letters.  89 (2006)  15 - p. , 2006
Link: https://doi.org/10.1063/..
 
?
11

GaN resistive hydrogen gas sensors:

Yun, Feng ; Chevtchenko, Serguei ; Moon, Yong-Tae...
Applied Physics Letters.  87 (2005)  7 - p. , 2005
Link: https://doi.org/10.1063/..
 
1-11