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Grossner, Ulrike
89  Ergebnisse:
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1

Anisotropic and Optimized FFT-Based Iterative Electromagnet..:

Romano, Daniele ; Kovacevic-Badstuebner, Ivana ; Antonini, Giulio.
IEEE Transactions on Microwave Theory and Techniques.  72 (2024)  5 - p. 2927-2937 , 2024
Link: https://doi.org/10.1109/..
 
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2

Aluminum channeling in 4H-SiC by high-energy implantation a..:

Belanche, Manuel ; Yonezawa, Yoshiyuki ; Heller, René...
Materials Science in Semiconductor Processing.  179 (2024)  - p. 108461 , 2024
Link: https://doi.org/10.1016/..
 
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3

Impact of carbon injection in 4H-SiC on defect formation an..:

Bathen, Marianne Etzelmüller ; Karsthof, Robert ; Galeckas, Augustinas...
Materials Science in Semiconductor Processing.  176 (2024)  - p. 108316 , 2024
Link: https://doi.org/10.1016/..
 
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4

Accelerated Evaluation of Quasi-Static Interaction Integral..:

Romano, Daniele ; Kovacevic-Badstuebner, Ivana ; Antonini, Giulio.
IEEE Transactions on Electromagnetic Compatibility.  66 (2024)  3 - p. 829-836 , 2024
Link: https://doi.org/10.1109/..
 
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5

Dual configuration of shallow acceptor levels in 4H-SiC:

Bathen, Marianne Etzelmüller ; Kumar, Piyush ; Ghezellou, Misagh...
Materials Science in Semiconductor Processing.  177 (2024)  - p. 108360 , 2024
Link: https://doi.org/10.1016/..
 
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6

Minority Carrier Traps Induced by Neutron Reactions with 4H..:

Belanche, Manuel ; Bathen, Marianne Etzelmüller ; Kumar, Piyush...
Defect and Diffusion Forum.  426 (2023)  - p. 23-28 , 2023
Link: https://doi.org/10.4028/..
 
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7

Optimized Analytical Computation of Partial Elements Using ..:

Romano, Daniele ; Kovacevic-Badstuebner, Ivana ; Grossner, Ulrike.
IEEE Transactions on Electromagnetic Compatibility.  65 (2023)  4 - p. 1220-1231 , 2023
Link: https://doi.org/10.1109/..
 
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8

Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs:

Martinella, Corinna ; Bathen, Marianne Etzelmüller ; Javanainen, Arto.
Materials Science Forum.  1090 (2023)  - p. 179-184 , 2023
Link: https://doi.org/10.4028/..
 
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9

Energy-Dependent Impact of Proton Irradiation on 4H-SiC Sch..:

Kumar, Piyush ; Belanche, Manuel ; Für, Natalija...
Materials Science Forum.  1092 (2023)  - p. 187-192 , 2023
Link: https://doi.org/10.4028/..
 
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10

Temperature Dependence of the Channel and Drift Resistance ..:

Stark, Roger ; Tsibizov, Alexander ; Race, Salvatore...
Materials Science Forum.  1092 (2023)  - p. 165-170 , 2023
Link: https://doi.org/10.4028/..
 
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11

Mapping the impact of defect distributions in silicon carbi..:

Dorfer, Christian ; Bathen, Marianne E. ; Race, Salvatore...
Applied Physics Letters.  122 (2023)  18 - p. , 2023
Link: https://doi.org/10.1063/..
 
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12

Charge State Control over Point Defects in Sic Devices:

Bathen, Marianne Etzelmüller ; Selnesaunet, Gard M. ; Enga, Marius Johan...
Defect and Diffusion Forum.  425 (2023)  - p. 35-42 , 2023
Link: https://doi.org/10.4028/..
 
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13

Small-Signal Impedance and Split C-V Characterization of Hi..:

Race, Salvatore ; Kovacevic-Badstuebner, Ivana ; Stark, Roger...
Materials Science Forum.  1091 (2023)  - p. 67-71 , 2023
Link: https://doi.org/10.4028/..
 
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14

Defect Profiling of Oxide‐Semiconductor Interfaces Using Lo..:

Mendes Martins, Maria ; Kumar, Piyush ; Woerle, Judith...
Advanced Materials Interfaces.  10 (2023)  21 - p. , 2023
Link: https://doi.org/10.1002/..
 
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15

Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Lar..:

Jousseaume, Yann ; Cauwet, François ; Woerle, Judith...
Materials Science Forum.  1089 (2023)  - p. 9-14 , 2023
Link: https://doi.org/10.4028/..
 
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