E-LIB Suche - Ergebnisse für: Gucmann, F

1

Electron transport properties in thin InN layers grown on I..:

Stoklas, R. ; Hasenöhrl, S. ; Dobročka, E...
Materials Science in Semiconductor Processing. 155 (2023) - p. 107250 , 2023

Link: https://doi.org/10.1016/..

2

Doping efficiency and electron transport in Al-doped ZnO fi..:

Mošková, A. ; Moško, M. ; Precner, M....
Journal of Applied Physics. 130 (2021) 3 - p. , 2021

Link: https://doi.org/10.1063/..

3

Semi-insulating GaN for vertical structures: role of substr..:

Šichman, P. ; Hasenöhrl, S. ; Stoklas, R....
Materials Science in Semiconductor Processing. 118 (2020) - p. 105203 , 2020

Link: https://doi.org/10.1016/..

4

A systematic study of MOCVD reactor conditions and Ga memor..:

Chauhan, Prerna ; Hasenöhrl, S. ; Vančo, Ľ....
CrystEngComm. 22 (2020) 1 - p. 130-141 , 2020

Link: https://doi.org/10.1039/..

5

Growth of α- and β-Ga2O3 epitaxial layers on sapphire subst..:

Egyenes-Pörsök, F ; Gucmann, F ; Hušeková, K...
Semiconductor Science and Technology. 35 (2020) 11 - p. 115002 , 2020

Link: https://doi.org/10.1088/..

6

Investigation of interfaces and threshold voltage instabili..:

Pohorelec, O. ; Ťapajna, M. ; Gregušová, D....
Applied Surface Science. 528 (2020) - p. 146824 , 2020

Link: https://doi.org/10.1016/..

7

Evidence of relationship between strain and In-incorporatio..:

Chauhan, P. ; Hasenöhrl, S. ; Dobročka, E....
Journal of Applied Physics. 125 (2019) 10 - p. , 2019

Link: https://doi.org/10.1063/..

8

Impact of oxide/barrier charge on threshold voltage instabi..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 91 (2019) - p. 356-361 , 2019

Link: https://doi.org/10.1016/..

9

Corrigendum to "Impact of oxide/barrier charge on threshold..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 93 (2019) - p. 381 , 2019

Link: https://doi.org/10.1016/..

10

Technology and application of in-situ AlOx layers on III-V ..:

Kúdela, R. ; Šoltýs, J. ; Kučera, M....
Applied Surface Science. 461 (2018) - p. 33-38 , 2018

Link: https://doi.org/10.1016/..

11

Properties of InGaAs/GaAs metal-oxide-semiconductor heteros..:

Gregušová, D. ; Gucmann, F. ; Kúdela, R....
Applied Surface Science. 395 (2017) - p. 140-144 , 2017

Link: https://doi.org/10.1016/..

12

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-..:

Ťapajna, M. ; Stoklas, R. ; Gregušová, D....
Applied Surface Science. 426 (2017) - p. 656-661 , 2017

Link: https://doi.org/10.1016/..

13

InGaAs/GaAs metal-oxide-semiconductor heterostructure field..:

Gucmann, F. ; Gregušová, D. ; Stoklas, R....
Applied Physics Letters. 105 (2014) 18 - p. 183504 , 2014

Link: https://doi.org/10.1063/..

14

Scaling of the physical properties in Ba(Fe,Ni)2As2single c..:

Rodière, P. ; Klein, T. ; Lemberger, L....
Physical Review B. 85 (2012) 21 - p. , 2012

Link: https://doi.org/10.1103/..