E-LIB Suche - Ergebnisse für: Henri, I.

1

L'insuffisance ovarienne débutante : quels protocoles ?:

Merviel, P. ; Lourdel, E. ; Boulard, V....
Gynécologie Obstétrique & Fertilité. 36 (2008) 9 - p. 872-881 , 2008

Link: https://doi.org/10.1016/..

2

P319 - Prévalence et signification clinique des auto antico..:

Lok, C. ; Tapiero, N. ; Henri, I....
Annales de Dermatologie et de Vénéréologie. 132 (2005) - p. 266 , 2005

Link: https://doi.org/10.1016/..

3

Defect-Free and Annealing Influences in P3HT Organic Field-..:

Leite, Gabriel V. ; Boudinov, Henri I.
IEEE Transactions on Device and Materials Reliability. 21 (2021) 1 - p. 111-116 , 2021

Link: https://doi.org/10.1109/..

4

Atomic composition, structure, and electrical properties of..:

Giulian, Raquel ; Bolzan, Charles A. ; Rossetto, Leandro T....
Thin Solid Films. 709 (2020) - p. 138213 , 2020

Link: https://doi.org/10.1016/..

5

Instability of p–i–n perovskite solar cells under reverse b..:

Razera, Ricardo A. Z. ; Jacobs, Daniel A. ; Fu, Fan...
Journal of Materials Chemistry A. 8 (2020) 1 - p. 242-250 , 2020

Link: https://doi.org/10.1039/..

6

Plagiocephaly after Neonatal Developmental Dysplasia of the..:

Valkama, A Marita ; Aarnivala, Henri I ; Sato, Koshi...
Journal of Clinical Medicine. 9 (2019) 1 - p. 21 , 2019

Link: https://doi.org/10.3390/..

7

Anomalous Current–Voltage Behavior in Al/TiO2/n‐Si Structur..:

Razera, Ricardo A. Z. ; Boudinov, Henri I. ; Rodrigues, Frâncio S. B...
physica status solidi (RRL) – Rapid Research Letters. 12 (2018) 6 - p. , 2018

Link: https://doi.org/10.1002/..

8

Schottky barrier height of Ni/TiO2/4H-SiC metal-insulator-s..:

Kaufmann, Ivan R ; Pereira, Marcelo B ; Boudinov, Henri I
Semiconductor Science and Technology. 30 (2015) 12 - p. 125002 , 2015

Link: https://doi.org/10.1088/..

9

Improvement in the SiO2/4H-SiC Interfacial Region by Therma..:

Pitthan, Eduardo ; Corrêa, Silma A. ; Palmieri, Rodrigo...
Materials Science Forum. 717-720 (2012) - p. 753-756 , 2012

Link: https://doi.org/10.4028/..

10

Quantum Hall Effect as an Electrical Resistance Standard:

Boudinov, Henri I. ; Boff, Marco
ECS Transactions. 39 (2011) 1 - p. 31-36 , 2011

Link: https://doi.org/10.1149/..

11

Si Nanocrystals Embedded in SiO2 Produced by Reactive Sputt..:

De Mattos, Antônio Eudócio P. ; Sombrio, Guilherme ; Franzen, Paulo L...
ECS Transactions. 39 (2011) 1 - p. 103-108 , 2011

Link: https://doi.org/10.1149/..

12

Effect of Reoxidations and Thermal Treatments with Hydrogen..:

Pitthan, Eduardo ; Corre^a, Silma A. ; Palmieri, Rodrigo...
Electrochemical and Solid-State Letters. 14 (2011) 9 - p. H368 , 2011

Link: https://doi.org/10.1149/..

13

Structural Characterization of Si1-xCx Nanolayers Synthesiz..:

Dos Reis, Roberto M. ; Maltez, Rogerio L. ; Boudinov, Henri I.
ECS Transactions. 39 (2011) 1 - p. 95-101 , 2011

Link: https://doi.org/10.1149/..

14

Sputtered Silicon Nitride Thin Films for Non-Volatile Memor..:

Adam, Matheus ; Coelho, Artur Vicente P. ; Pereira, Marcelo B..
ECS Transactions. 39 (2011) 1 - p. 371-377 , 2011

Link: https://doi.org/10.1149/..

15

Photoluminescence in Non-Stoichiometric Silicon Nitride Fil..:

Sombrio, Guilherme ; De Mattos, Antônio Eudócio P. ; Franzen, Paulo L...
ECS Transactions. 39 (2011) 1 - p. 315-320 , 2011

Link: https://doi.org/10.1149/..