E-LIB Suche - Ergebnisse für: Horiguchi, N.

1

Characterization and Advanced Modeling of Dielectric Defect..:

Asanovski, R. ; Arimura, H. ; de Marneffe, J.-F....
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1745-1751 , 2024

Link: https://doi.org/10.1109/..

2

Compact thermally stable high voltage FinFET with 40 nm tox..:

Spessot, A. ; Matagne, P. ; Arimura, H....
Japanese Journal of Applied Physics. 63 (2024) 3 - p. 03SP12 , 2024

Link: https://doi.org/10.35848..

3

Impact of work function metal stacks on the performance and..:

Franco, J. ; Arimura, H. ; Brus, S....
Solid-State Electronics. 216 (2024) - p. 108929 , 2024

Link: https://doi.org/10.1016/..

4

Characterization of DC performance and low-frequency noise ..:

Asanovski, R. ; Grill, A. ; Franco, J....
Solid-State Electronics. 215 (2024) - p. 108881 , 2024

Link: https://doi.org/10.1016/..

5

Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Perfor..:

Bufler, F. M. ; Arimura, H. ; Favia, P....
IEEE Transactions on Electron Devices. 69 (2022) 11 - p. 6384-6387 , 2022

Link: https://doi.org/10.1109/..

6

Nanowire & nanosheet FETs for ultra-scaled, high-density lo..:

Veloso, A. ; Huynh-Bao, T. ; Matagne, P....
Solid-State Electronics. 168 (2020) - p. 107736 , 2020

Link: https://doi.org/10.1016/..

7

Low-Frequency Noise Assessment of Work Function Engineering..:

Claeys, C. ; Ritzenthaler, R. ; Schram, T....
ECS Journal of Solid State Science and Technology. 8 (2019) 2 - p. N25-N31 , 2019

Link: https://doi.org/10.1149/..

8

Scalability comparison between raised- and embedded-SiGe so..:

Yamaguchi, S. ; Witters, L. ; Mitard, J....
Microelectronics Reliability. 83 (2018) - p. 157-161 , 2018

Link: https://doi.org/10.1016/..

9

Low Frequency Noise Analysis of Impact of Metal Gate Proces..:

Claeys, C. ; He, L. ; O'Sullivan, B. J....
ECS Journal of Solid State Science and Technology. 7 (2018) 3 - p. Q26-Q32 , 2018

Link: https://doi.org/10.1149/..

10

Study of the Intrinsic Limitations of the Contact Resistanc..:

Dabral, A. ; Pourtois, G. ; Sankaran, K....
ECS Journal of Solid State Science and Technology. 7 (2018) 6 - p. N73-N80 , 2018

Link: https://doi.org/10.1149/..

11

Can we optimize the gate oxide quality of DRAM input/output..:

Simoen, E ; O'Sullivan, B ; Ritzenthaler, R...
Semiconductor Science and Technology. 34 (2018) 1 - p. 015017 , 2018

Link: https://doi.org/10.1088/..

12

PO-008 Accelerated DNA methylation in gastric mucosa adjace..:

Tahara, S. ; Tahara, T. ; Horiguchi, N....
ESMO Open. 3 (2018) - p. A23-A24 , 2018

Link: https://doi.org/10.1136/..

13

Properties of ALD TaxNy films as a barrier to aluminum in w..:

Dekkers, H. F. W. ; Ragnarsson, L.-Å. ; Schram, T..
Journal of Applied Physics. 124 (2018) 16 - p. , 2018

Link: https://doi.org/10.1063/..

14

Advances on doping strategies for triple-gate finFETs and l..:

Veloso, A. ; De Keersgieter, A. ; Matagne, P...
Materials Science in Semiconductor Processing. 62 (2017) - p. 2-12 , 2017

Link: https://doi.org/10.1016/..

15

Erratum to Advances on Doping Strategies for Triple-Gate Fi..:

Veloso, A. ; Keersgieter, A. De ; Matagne, P...
Materials Science in Semiconductor Processing. 63 (2017) - p. 303 , 2017

Link: https://doi.org/10.1016/..