E-LIB Suche - Ergebnisse für: Leamy, H. J.

1

Growth of Single Crystalline 3C-SiC and AIN on Si using Por..:

Purser, D. ; Jenkins, M. ; Lieu, D....
Materials Science Forum. 338-342 (2000) - p. 313-316 , 2000

Link: https://doi.org/10.4028/..

2

Tunneling current microscopy:

Lin, P. S. D. ; Leamy, H. J.
Applied Physics Letters. 42 (1983) 8 - p. 717-719 , 1983

Link: https://doi.org/10.1063/..

3

Cellular growth in micro-zone melted silicon:

Leamy, H.J. ; Chang, C.C. ; Baumgart, H...
Materials Letters. 1 (1982) 1 - p. 33-36 , 1982

Link: https://doi.org/10.1016/..

4

Charge Collection Microscopy on p ‐ WSe2: Recombination Sit..:

Lewerenz, H. J. ; Ferris, S. D. ; Doherty, C. J..
Journal of The Electrochemical Society. 129 (1982) 2 - p. 418-423 , 1982

Link: https://doi.org/10.1149/..

5

Charge collection scanning electron microscopy:

Leamy, H. J.
Journal of Applied Physics. 53 (1982) 6 - p. R51-R80 , 1982

Link: https://doi.org/10.1063/..

6

Direct observation of grain boundary effects in polycrystal..:

Leamy, H. J. ; Frye, R. C. ; Ng, K. K....
Applied Physics Letters. 40 (1982) 7 - p. 598-600 , 1982

Link: https://doi.org/10.1063/..

7

Seeded oscillatory growth of Si over SiO2 by cw laser irrad..:

Celler, G. K. ; Trimble, L. E. ; Ng, K. K...
Applied Physics Letters. 40 (1982) 12 - p. 1043-1045 , 1982

Link: https://doi.org/10.1063/..

8

Characterization of pulsed Nd:YAG laser-annealed, arsenic-i..:

Williams, J. S. ; Brown, W. L. ; Celler, G. K....
Journal of Applied Physics. 52 (1981) 2 - p. 1038-1049 , 1981

Link: https://doi.org/10.1063/..

9

Explosive crystallization of amorphous germanium:

Leamy, H. J. ; Brown, W. L. ; Celler, G. K....
Applied Physics Letters. 38 (1981) 3 - p. 137-139 , 1981

Link: https://doi.org/10.1063/..

10

Annular grain structures in pulsed laser recrystallized Si ..:

Celler, G. K. ; Leamy, H. J. ; Trimble, L. E..
Applied Physics Letters. 39 (1981) 5 - p. 425-427 , 1981

Link: https://doi.org/10.1063/..

11

IVB-6 effects of grain boundaries on laser crystallized pol..:

Ng, K.K. ; Celler, G.K. ; Povilonis, E.I....
IEEE Transactions on Electron Devices. 28 (1981) 10 - p. 1240-1240 , 1981

Link: https://doi.org/10.1109/..

12

Preparation of Glassy Metals:

Chen, H S ; Leamy, H J ; Miller, C E
Annual Review of Materials Science. 10 (1980) 1 - p. 363-391 , 1980

Link: https://doi.org/10.1146/..

13

Reduction of GaAs surface recombination velocity by chemica..:

Nelson, R. J. ; Williams, J. S. ; Leamy, H. J....
Applied Physics Letters. 36 (1980) 1 - p. 76-79 , 1980

Link: https://doi.org/10.1063/..

14

Nonequilibrium incorporation of impurities during rapid sol..:

Leamy, H.J. ; Bean, J.C. ; Poate, J.M..
Journal of Crystal Growth. 48 (1980) 3 - p. 379-382 , 1980

Link: https://doi.org/10.1016/..

15

Laser formation of Pt-Si Schottky barriers on silicon:

Doherty, C. J. ; Crider, C. A. ; Leamy, H. J..
Journal of Electronic Materials. 9 (1980) 2 - p. 453-458 , 1980

Link: https://doi.org/10.1007/..