E-LIB Suche - Ergebnisse für: Loo, R.

1

If an entertainment company organized your graduate medical..:

Wild, D. ; Bischoff, M. ; Dehnen, D....
Zeitschrift für Allgemeinmedizin. 99 (2023) 5 - p. 240-244 , 2023

2

Multi-Domain Interventions for Dementia Prevention–A System..:

Castro, C.B. ; Costa, L.M. ; Dias, C.B....
The Journal of nutrition, health and aging. 27 (2023) 12 - p. 1271-1280 , 2023

Link: https://doi.org/10.1007/..

3

Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing a..:

Loo, R. ; Porret, C. ; Han, H....
ECS Journal of Solid State Science and Technology. 10 (2021) 8 - p. 084003 , 2021

Link: https://doi.org/10.1149/..

4

Epitaxial Growth of Active Si on Top of SiGe Etch Stop Laye..:

Loo, R. ; Jourdain, A. ; Rengo, G....
ECS Journal of Solid State Science and Technology. 10 (2021) 1 - p. 014001 , 2021

Link: https://doi.org/10.1149/..

5

Very Low Temperature Epitaxy of Group-IV Semiconductors for..:

Porret, C. ; Hikavyy, A. ; Granados, J. F. Gomez...
ECS Journal of Solid State Science and Technology. 8 (2019) 8 - p. P392-P399 , 2019

Link: https://doi.org/10.1149/..

6

TEM investigations of gate-all-around nanowire devices:

Favia, P ; Richard, O ; Eneman, G...
Semiconductor Science and Technology. 34 (2019) 12 - p. 124003 , 2019

Link: https://doi.org/10.1088/..

7

Carrier scattering induced linewidth broadening in in situ ..:

Srinivasan, S. A. ; Porret, C. ; Pantouvaki, M....
Applied Physics Letters. 113 (2018) 16 - p. 161101 , 2018

Link: https://doi.org/10.1063/..

8

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passi..:

Loo, R. ; Arimura, H. ; Cott, D....
ECS Journal of Solid State Science and Technology. 7 (2018) 2 - p. P66-P72 , 2018

Link: https://doi.org/10.1149/..

9

A FRAMEWORK FOR RELIABLE THREE-DIMENSIONAL UNDERGROUND UTIL..:

van Son, R. ; Jaw, S. W. ; Yan, J....
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences. XLII-4/W10 (2018) - p. 209-214 , 2018

Link: https://doi.org/10.5194/..

10

Scalability comparison between raised- and embedded-SiGe so..:

Yamaguchi, S. ; Witters, L. ; Mitard, J....
Microelectronics Reliability. 83 (2018) - p. 157-161 , 2018

Link: https://doi.org/10.1016/..

11

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on..:

Gupta, S. ; Shimura, Y. ; Richard, O....
Applied Physics Letters. 113 (2018) 19 - p. , 2018

Link: https://doi.org/10.1063/..

12

Impact of band to band tunneling in In0.53Ga0.47As tunnel d..:

Gupta, S. ; Simoen, E. ; Loo, R....
Applied Physics Letters. 113 (2018) 23 - p. , 2018

Link: https://doi.org/10.1063/..

13

Use of high order precursors for manufacturing gate all aro..:

Hikavyy, A. ; Zyulkov, I. ; Mertens, H....
Materials Science in Semiconductor Processing. 70 (2017) - p. 24-29 , 2017

Link: https://doi.org/10.1016/..

14

Carbon-Related Defects in Si:C/Silicon Heterostructures Ass..:

Simoen, E. ; Dhayalan, S. K. ; Hikavyy, A....
ECS Journal of Solid State Science and Technology. 6 (2017) 5 - p. P284-P289 , 2017

Link: https://doi.org/10.1149/..

15

Factors affecting sleep patterns in Singaporean adolescents..:

Hameed, S. ; Balagtas, J.P. ; Loo, R....
Sleep Medicine. 40 (2017) - p. e125-e126 , 2017

Link: https://doi.org/10.1016/..