E-LIB Suche - Ergebnisse für: Matulionis, A.

1

Self-formation of high-field domain in epitaxial ZnO and it..:

Šermukšnis, E. ; Liberis, J. ; Šimukovič, A....
Applied Physics Letters. 118 (2021) 25 - p. , 2021

Link: https://doi.org/10.1063/..

2

Terahertz oscillations in gallium nitride quantum-well chan..:

Ramonas, M. ; Liberis, J. ; Šimukovič, A....
Journal of Applied Physics. 128 (2020) 5 - p. 055702 , 2020

Link: https://doi.org/10.1063/..

3

Electron drift velocity in wurtzite ZnO at high electric fi..:

Ardaravičius, L. ; Kiprijanovič, O. ; Ramonas, M....
Journal of Applied Physics. 126 (2019) 18 - p. , 2019

Link: https://doi.org/10.1063/..

4

Hot LO-phonon limited electron transport in ZnO/MgZnO chann..:

Šermukšnis, E. ; Liberis, J. ; Matulionis, A....
Journal of Applied Physics. 123 (2018) 17 - p. , 2018

Link: https://doi.org/10.1063/..

5

Threshold field for soft damage and electron drift velocity..:

Ardaravičius, L ; Kiprijanovič, O ; Liberis, J...
Semiconductor Science and Technology. 30 (2015) 10 - p. 105016 , 2015

Link: https://doi.org/10.1088/..

6

Hot-electron real-space transfer and longitudinal transport..:

Šermukšnis, E ; Liberis, J ; Matulionis, A...
Semiconductor Science and Technology. 30 (2015) 3 - p. 035003 , 2015

Link: https://doi.org/10.1088/..

7

Hot-electron energy relaxation time in Ga-doped ZnO films:

Šermukšnis, E. ; Liberis, J. ; Ramonas, M....
Journal of Applied Physics. 117 (2015) 6 - p. , 2015

Link: https://doi.org/10.1063/..

8

Compact modelling of InAlN/GaN HEMT for low noise applicati..:

Sakalas, P ; Šimukovič, A ; Piotrowicz, S...
Semiconductor Science and Technology. 29 (2014) 9 - p. 095014 , 2014

Link: https://doi.org/10.1088/..

9

Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels:

Liberis, J ; Ramonas, M ; Šermukšnis, E...
Semiconductor Science and Technology. 29 (2014) 4 - p. 045018 , 2014

Link: https://doi.org/10.1088/..

10

The effect of stair case electron injector design on electr..:

Zhang, F. ; Li, X. ; Hafiz, S....
Applied Physics Letters. 103 (2013) 5 - p. , 2013

Link: https://doi.org/10.1063/..

11

Plasmon-controlled optimum gate bias for GaN heterostructur..:

Šimukovič, A ; Matulionis, A ; Liberis, J...
Semiconductor Science and Technology. 28 (2013) 5 - p. 055008 , 2013

Link: https://doi.org/10.1088/..

12

High frequency noise of epitaxial graphene grown on sapphir:

Ardaravicˇius, L. ; Liberis, J. ; Šermukšnis, E....
physica status solidi (RRL) – Rapid Research Letters. 7 (2013) 5 - p. 348-351 , 2013

Link: https://doi.org/10.1002/..

13

Degradation and phase noise of InAlN/AlN/GaN heterojunction..:

Zhu, C. Y. ; Wu, M. ; Kayis, C....
Applied Physics Letters. 101 (2012) 10 - p. , 2012

Link: https://doi.org/10.1063/..

14

Window for better reliability of nitride heterostructure fi..:

Matulionis, A. ; Liberis, J. ; Šermukšnis, E....
Microelectronics Reliability. 52 (2012) 9-10 - p. 2149-2152 , 2012

Link: https://doi.org/10.1016/..

15

Publisher's Note: "Impact of active layer design on InGaN r..:

Li, X. ; Okur, S. ; Zhang, F....
Journal of Applied Physics. 111 (2012) 9 - p. , 2012

Link: https://doi.org/10.1063/..