E-LIB Suche - Ergebnisse für: Polyakov, Ya. S.

1

Means of checking an automatic two-dimensional photometer f..:

Shiffers, L. A. ; Bresler, P. I. ; Polyakov, Ya. S.
Biomedical Engineering. 25 (1991) 3 - p. 145-147 , 1991

2

Calibration of a luminescence photometer for the purpose of..:

Solov'eva, I. I. ; Firyulina, V. V. ; Shiffers, L. A....
Journal of Applied Spectroscopy. 42 (1985) 5 - p. 534-538 , 1985

Link: https://doi.org/10.1007/..

3

Some new fluorescence-analysis methods for multicomponent m..:

Polyakov, Ya. S. ; Shiffers, L. A.
Journal of Applied Spectroscopy. 41 (1984) 2 - p. 855-862 , 1984

Link: https://doi.org/10.1007/..

4

Afterglow of zeolite crystals activated by tin atoms Snº:

Bogomolov, V. N. ; Kholodkevich, S. V. ; Polyakov, Ya. S.
Physica Status Solidi (a). 62 (1980) 2 - p. 603-607 , 1980

Link: https://doi.org/10.1002/..

5

Abstracts:

Aristov, A. V. ; Polyakov, Ya. S. ; Kaminskii, A. Ya....
Journal of Applied Spectroscopy. 18 (1973) 2 - p. 256-258 , 1973

Link: https://doi.org/10.1007/..

6

Effects of cooling end-window photomultipliers used in micr..:

Polyakov, Ya. S. ; Rozanov, Yu. M. ; Preobrazhenskii, R. K.
Journal of Applied Spectroscopy. 13 (1970) 3 - p. 1284-1286 , 1970

Link: https://doi.org/10.1007/..

7

Spectral investigation of luminescence of glass in the 300?..:

Shiffers, L. A. ; Barskii, I. Ya. ; Polyakov, Ya. S.
Journal of Applied Spectroscopy. 11 (1969) 4 - p. 1214-1217 , 1969

Link: https://doi.org/10.1007/..

8

A phosphorescence microscope:

Polyakov, Ya. S.
Journal of Applied Spectroscopy. 7 (1967) 4 - p. 433-436 , 1967

Link: https://doi.org/10.1007/..

9

Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapp..:

Nikolaev, V. I. ; Timashov, R. B. ; Stepanov, A. I....
Technical Physics Letters. 49 (2023) S3 - p. S284-S287 , 2023

Link: https://doi.org/10.1134/..

10

Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sap..:

Nikolaev, V. I. ; Polyakov, A. Ya. ; Stepanov, S. I....
Technical Physics. 68 (2023) 12 - p. 689-694 , 2023

Link: https://doi.org/10.1134/..

11

Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire S..:

Nikolaev, V. I. ; Pechnikov, A. I. ; Guzilova, L. I....
Technical Physics Letters. 46 (2020) 3 - p. 228-230 , 2020

Link: https://doi.org/10.1134/..

12

Electronic properties of p-GaN(Mg) irradiated with reactor ..:

Boiko, V. M. ; Brudnyi, V. N. ; Verevkin, S. S....
Semiconductors. 48 (2014) 7 - p. 859-863 , 2014

Link: https://doi.org/10.1134/..

13

Recombination and trapping centers in pure and doped TlBr c..:

Gazizov, I. M. ; Zaletin, V. M. ; Govorkov, A. V....
Semiconductors. 48 (2014) 9 - p. 1123-1133 , 2014

Link: https://doi.org/10.1134/..

14

Electronic properties and deep traps in electron-irradiated..:

Brudnyi, V. N. ; Verevkin, S. S. ; Govorkov, A. V....
Semiconductors. 46 (2012) 4 - p. 433-439 , 2012

Link: https://doi.org/10.1134/..

15

Structural and electric properties of AlN substrates used f..:

Polyakov, A. Ya. ; Smirnov, N. B. ; Govorkov, A. V....
Russian Microelectronics. 40 (2011) 8 - p. 629-633 , 2011

Link: https://doi.org/10.1134/..