E-LIB Suche - Ergebnisse für: Rzepa, Gerhard

1

Overview of emerging semiconductor device model methodologi..:

Li, Xufan ; Wu, Zhenhua ; Rzepa, Gerhard...
Fundamental Research. , 2024

Link: https://doi.org/10.1016/..

2

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-I..:

Thesberg, Mischa ; Schanovsky, Franz ; Zhao, Ying...
Micromachines. 15 (2024) 7 - p. 829 , 2024

Link: https://doi.org/10.3390/..

3

Inflection Points in GAA NS-FET to C-FET Scaling Considerin..:

Yakimets, Dmitry ; Bhuwalka, Krishna K. ; Wu, Hao...
IEEE Transactions on Electron Devices. 71 (2024) 4 - p. 2309-2314 , 2024

Link: https://doi.org/10.1109/..

4

Comphy v3.0—A compact-physics framework for modeling charge..:

Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob...
Microelectronics Reliability. 146 (2023) - p. 115004 , 2023

Link: https://doi.org/10.1016/..

5

DTCO flow for air spacer generation and its impact on power..:

Filipovic, Lado ; Baumgartner, Oskar ; Klemenschits, Xaver...
Solid-State Electronics. 199 (2023) - p. 108527 , 2023

Link: https://doi.org/10.1016/..

6

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFE..:

Vasilev, Aleksandr ; Feil, Maximilian Wolfgang ; Schleich, Christian...
Materials Science Forum. 1090 (2023) - p. 119-126 , 2023

Link: https://doi.org/10.4028/..

7

TCAD Modeling of Temperature Activation of the Hysteresis C..:

Vasilev, Alexander ; Jech, Markus ; Grill, Alexander...
IEEE Transactions on Electron Devices. 69 (2022) 6 - p. 3290-3295 , 2022

Link: https://doi.org/10.1109/..

8

Optimization and Benchmarking FinFETs and GAA Nanosheet Arc..:

Bhuwalka, Krishna K. ; Wu, Hao ; Zhao, Wenbo...
IEEE Transactions on Electron Devices. 69 (2022) 8 - p. 4088-4094 , 2022

Link: https://doi.org/10.1109/..

9

Impact of single-defects on the variability of CMOS inverte..:

Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos...
Microelectronics Reliability. 126 (2021) - p. 114275 , 2021

Link: https://doi.org/10.1016/..

10

Separation of electron and hole trapping components of PBTI..:

Waltl, Michael ; Stampfer, Bernhard ; Rzepa, Gerhard..
Microelectronics Reliability. 114 (2020) - p. 113746 , 2020

Link: https://doi.org/10.1016/..

11

Mixed Hot-Carrier/Bias Temperature Instability Degradation ..:

Jech, Markus ; Rott, Gunnar ; Reisinger, Hans...
IEEE Transactions on Electron Devices. 67 (2020) 8 - p. 3315-3322 , 2020

Link: https://doi.org/10.1109/..

12

Energetic mapping of oxide traps in MoS2field-effect transi..:

Illarionov, Yury Yu ; Knobloch, Theresia ; Waltl, Michael...
2D Materials. 4 (2017) 2 - p. 025108 , 2017

Link: https://doi.org/10.1088/..

13

(Invited) Impact of Gate Dielectrics on the Threshold Volta..:

Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury Yuryevich...
ECS Transactions. 80 (2017) 1 - p. 203-217 , 2017

Link: https://doi.org/10.1149/..

14

The role of charge trapping in MoS2/SiO2and MoS2/hBN field-..:

Illarionov, Yury Yu ; Rzepa, Gerhard ; Waltl, Michael...
2D Materials. 3 (2016) 3 - p. 035004 , 2016

Link: https://doi.org/10.1088/..

15

Long-Term Stability and Reliability of Black Phosphorus Fie..:

Illarionov, Yury Yuryevich ; Waltl, Michael ; Rzepa, Gerhard...
ACS Nano. 10 (2016) 10 - p. 9543-9549 , 2016

Link: https://doi.org/10.1021/..