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Sakalas, P
29  Ergebnisse:
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1

96 GHz 4.7 mW low‐power frequency tripler with 0.5 V supply..:

Liang, W. ; Mukherjee, A. ; Sakalas, P...
Electronics Letters.  53 (2017)  19 - p. 1308-1310 , 2017
Link: https://doi.org/10.1049/..
 
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2

mm-Wave noise modeling in advanced SiGe and InP HBTs:

Sakalas, P. ; Schroter, M. ; Zirath, H.
Journal of Computational Electronics.  14 (2015)  1 - p. 62-71 , 2015
Link: https://doi.org/10.1007/..
 
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3

The potential for sensitivity enhancement by the thermoelec..:

Bauer, M ; Andersson, M ; Zak, A...
Journal of Physics: Conference Series.  647 (2015)  - p. 012004 , 2015
Link: https://doi.org/10.1088/..
 
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4

Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels:

Liberis, J ; Ramonas, M ; Šermukšnis, E...
Semiconductor Science and Technology.  29 (2014)  4 - p. 045018 , 2014
Link: https://doi.org/10.1088/..
 
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5

Compact modelling of InAlN/GaN HEMT for low noise applicati..:

Sakalas, P ; Šimukovič, A ; Piotrowicz, S...
Semiconductor Science and Technology.  29 (2014)  9 - p. 095014 , 2014
Link: https://doi.org/10.1088/..
 
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6

Plasmon-controlled optimum gate bias for GaN heterostructur..:

Šimukovič, A ; Matulionis, A ; Liberis, J...
Semiconductor Science and Technology.  28 (2013)  5 - p. 055008 , 2013
Link: https://doi.org/10.1088/..
 
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7

Investigation of electron delay in the base on noise perfor..:

Shimukovitch, A. ; Sakalas, P. ; Zampardi, P...
physica status solidi (RRL) – Rapid Research Letters.  4 (2010)  11 - p. 335-337 , 2010
Link: https://doi.org/10.1002/..
 
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8

Low-frequency noise in AlInAs/InGaAs/InP MBE- and MOCVD-gro..:

Sakalas, P ; Nawaz, M ; Zirath, H
Semiconductor Science and Technology.  15 (2000)  8 - p. 799-805 , 2000
Link: https://doi.org/10.1088/..
 
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9

Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunctio..:

Sakalas, P ; Garcia, M ; Zirath, H.
Semiconductor Science and Technology.  16 (2000)  1 - p. 14-20 , 2000
Link: https://doi.org/10.1088/..
 
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10

Design, processing and characterization of delta-doped chan..:

Nawaz, M ; Miranda, J M ; Sakalas, P...
Semiconductor Science and Technology.  15 (2000)  7 - p. 728-735 , 2000
Link: https://doi.org/10.1088/..
 
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11

Nonlinear transport and fluctuation characteristics of dope..:

Katilius, R. ; Liberis, J. ; Matulionis, A...
Nonlinear Analysis: Modelling and Control.  2 (1998)  - p. 35-42 , 1998
Link: https://doi.org/10.15388..
 
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12

Competition of shot noise and hot-electron noise in GaAs pl..:

Gružinskis, V. ; Liberis, J. ; Matulionis, A....
Applied Physics Letters.  73 (1998)  17 - p. 2488-2490 , 1998
Link: https://doi.org/10.1063/..
 
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13

Comparative analysis of microwave noise in GaAs and AlGaAs/..:

Aninkevičius, V. ; Bareikis, V. ; Liberis, J...
Solid-State Electronics.  36 (1993)  9 - p. 1339-1343 , 1993
Link: https://doi.org/10.1016/..
 
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14

Effect of hydrogen on hot electron noise in short samples o..:

Bareikis, V ; Liberis, J ; Matulionis, A..
Semiconductor Science and Technology.  8 (1993)  10 - p. 1829-1833 , 1993
Link: https://doi.org/10.1088/..
 
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15

Length dependent hot electron noise in doped GaAs:

Bareikis, V. ; Liberis, J. ; Matulionis, A....
Solid-State Electronics.  32 (1989)  12 - p. 1647-1650 , 1989
Link: https://doi.org/10.1016/..
 
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