E-LIB Suche - Ergebnisse für: Sandall, Ian

1

In Situ Monitoring of Aptamer–Protein Binding on a ZnO Surf..:

Alshammari, Adeem ; van Zalinge, Harm ; Sandall, Ian
Sensors. 23 (2023) 14 - p. 6353 , 2023

Link: https://doi.org/10.3390/..

2

GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared..:

Cao, Zhongming ; Hulme, Sorcha ; Veal, Tim D...
Frontiers in Electronic Materials. 2 (2022) - p. , 2022

Link: https://doi.org/10.3389/..

3

An Aptamer-Functionalised Schottky-Field Effect Transistor ..:

Farrow, Thomas ; Laumier, Siriny ; Sandall, Ian.
Biosensors. 12 (2022) 5 - p. 347 , 2022

Link: https://doi.org/10.3390/..

4

Selection and Functionalization of Germanium Nanowires for ..:

Laumier, Siriny ; Farrow, Thomas ; van Zalinge, Harm...
ACS Omega. 7 (2022) 39 - p. 35288-35296 , 2022

Link: https://doi.org/10.1021/..

5

Enhancing the engagement of large cohorts using live intera..:

Sedghi, Naser ; Limniou, Maria ; Al-Nuiamy, Waleed...
Developing Academic Practice. 2021 (2021) January - p. 31-50 , 2021

Link: https://doi.org/10.3828/..

6

Single-junction solar cells based on p-i-n GaAsSbN heterost..:

Milanova, Malina ; Donchev, Vesselin ; Cheetham, Kieran J....
Solar Energy. 208 (2020) - p. 659-664 , 2020

Link: https://doi.org/10.1016/..

7

Influence of annealing on the electrical characteristic of ..:

Cao, Zhongming ; Veal, Tim D. ; Ashwin, Mark J...
Journal of Applied Physics. 126 (2019) 5 - p. , 2019

Link: https://doi.org/10.1063/..

8

1300 nm Wavelength InAs Quantum Dot Photodetector Grown on ..:

Sandall, Ian ; Ng, Jo Shien ; David, John P. R....
Optics Express. 20 (2012) 10 - p. 10446 , 2012

Link: https://doi.org/10.1364/..

9

Planar InAs photodiodes fabricated using He ion implantatio:

Sandall, Ian ; Tan, Chee Hing ; Smith, Andrew.
Optics Express. 20 (2012) 8 - p. 8575 , 2012

Link: https://doi.org/10.1364/..

10

InAs-QDIP hybrid broadband infrared photodetector:

Tan, Chee H. ; Sandall, Ian C. ; Zhou, Xinxin.
MRS Advances. 1 (2016) 48 - p. 3301-3306 , 2016

Link: https://doi.org/10.1557/..

11

InAs Diodes Fabricated Using Be Ion Implantation:

White, Benjamin S. ; Sandall, Ian C. ; David, John P. R..
IEEE Transactions on Electron Devices. 62 (2015) 9 - p. 2928-2932 , 2015

Link: https://doi.org/10.1109/..

12

Temperature dependence of impact ionization in InAs: erratu:

Sandall, Ian C. ; Ng, Jo Shien ; Xie, Shiyu..
Optics Express. 22 (2014) 21 - p. 25923 , 2014

Link: https://doi.org/10.1364/..

13

Temperature dependence of impact ionization in InAs:

Sandall, Ian C. ; Ng, Jo Shien ; Xie, Shiyu..
Optics Express. 21 (2013) 7 - p. 8630 , 2013

Link: https://doi.org/10.1364/..

14

Linear array of InAs APDs operating at 2 µm:

Sandall, Ian C. ; Zhang, Shiyong ; Tan, Chee Hing
Optics Express. 21 (2013) 22 - p. 25780 , 2013

Link: https://doi.org/10.1364/..

15

High temperature and wavelength dependence of avalanche gai..:

Sandall, Ian C. ; Xie, Shiyu ; Xie, JingJing.
Optics Letters. 36 (2011) 21 - p. 4287 , 2011

Link: https://doi.org/10.1364/..