E-LIB Suche - Ergebnisse für: Simon-Najasek, Michél

1

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

2

Improved AlScN/GaN heterostructures grown by metal-organic ..:

Manz, Christian ; Leone, Stefano ; Kirste, Lutz...
Semiconductor Science and Technology. 36 (2021) 3 - p. 034003 , 2021

Link: https://doi.org/10.1088/..

3

Adaptive low-temperature covalent bonding of III-nitride th..:

Gerrer, Thomas ; Graff, Andreas ; Simon-Najasek, Michél...
Applied Physics Letters. 114 (2019) 25 - p. , 2019

Link: https://doi.org/10.1063/..

4

Advanced FIB sample preparation techniques for high resolut..:

Simon-Najasek, Michél ; Huebner, Susanne ; Altmann, Frank.
Microelectronics Reliability. 54 (2014) 9-10 - p. 1785-1789 , 2014

Link: https://doi.org/10.1016/..

5

Novel techniques for dopant contrast analysis on real IC st..:

Jatzkowski, Joerg ; Simon-Najasek, Michél ; Altmann, Frank
Microelectronics Reliability. 52 (2012) 9-10 - p. 2098-2103 , 2012

Link: https://doi.org/10.1016/..

6

Novel approach of combined planar and cross-sectional defec..:

Graff, A. ; Simon-Najasek, M. ; Hübner, S....
Microelectronics Reliability. 150 (2023) - p. 115096 , 2023

Link: https://doi.org/10.1016/..

7

Local metal segregation as root cause for electrical shorts..:

Simon-Najasek, M. ; Diehle, P. ; Große, Ch....
Microelectronics Reliability. 126 (2021) - p. 114235 , 2021

Link: https://doi.org/10.1016/..

8

Non-invasive soft breakdown localisation in low k dielectri..:

Herfurth, N. ; Wu, C. ; Beyreuther, A....
Microelectronics Reliability. 92 (2019) - p. 73-78 , 2019

Link: https://doi.org/10.1016/..

9

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-..:

Dammann, M. ; Baeumler, M. ; Brückner, P....
Microelectronics Reliability. 88-90 (2018) - p. 385-388 , 2018

Link: https://doi.org/10.1016/..

10

High resolution physical analysis of ohmic contact formatio..:

Graff, A. ; Simon-Najasek, M. ; Altmann, F....
Microelectronics Reliability. 76-77 (2017) - p. 338-343 , 2017

Link: https://doi.org/10.1016/..

11

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applicati..:

Dammann, M. ; Baeumler, M. ; Polyakov, V....
Microelectronics Reliability. 76-77 (2017) - p. 292-297 , 2017

Link: https://doi.org/10.1016/..

12

Detection and analysis of stress-induced voiding in Al-powe..:

Brand, S. ; Simon-Najasek, M. ; Kögel, M....
Microelectronics Reliability. 64 (2016) - p. 341-345 , 2016

Link: https://doi.org/10.1016/..

13

Novel failure mode of chip corrosion at automotive HALL sen..:

Simon-Najasek, M. ; Lorenz, G. ; Lindner, A..
Microelectronics Reliability. 64 (2016) - p. 248-253 , 2016

Link: https://doi.org/10.1016/..

14

Correlation of gate leakage and local strain distribution i..:

Broas, M. ; Graff, A. ; Simon-Najasek, M....
Microelectronics Reliability. 64 (2016) - p. 541-546 , 2016

Link: https://doi.org/10.1016/..