E-LIB Suche - Ergebnisse für: Sugahara, Tomoya

1

Enormously high-peak-power optical pulse generation from a ..:

Kuramoto, Masaru ; Oki, Tomoyuki ; Sugahara, Tomoya...
Applied Physics Letters. 96 (2010) 5 - p. , 2010

2

Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth o..:

Sugahara, Tomoya ; Lee, Jeong-Sik ; Ohtsuka, Kohji
Japanese Journal of Applied Physics. 43 (2004) 12B - p. L1595-L1597 , 2004

Link: https://doi.org/10.1143/..

3

Band-tail model and temperature-induced blue-shift in photo..:

Eliseev, Petr G. ; Osinski, Marek ; Lee, Jinhyun..
Journal of Electronic Materials. 29 (2000) 3 - p. 332-341 , 2000

Link: https://doi.org/10.1007/..

4

Annealing of GaN-InGaN Multi Quantum Wells: Correlation bet..:

G. Eliseev, Saulius Juodkazis ; Mitsuru Watanabe, Mitsuru Watanabe ; Hong-Bo Sun, Hong-Bo Sun...
Japanese Journal of Applied Physics. 39 (2000) 2R - p. 393 , 2000

Link: https://doi.org/10.1143/..

5

Current transport mechanism of p-GaN Schottky contacts:

Shiojima, Kenji ; Sugahara, Tomoya ; Sakai, Shiro
Applied Physics Letters. 77 (2000) 26 - p. 4353-4355 , 2000

Link: https://doi.org/10.1063/..

6

Investigation on the P-Type Activation Mechanism in Mg-dope..:

Youn, Doo-Hyeb ; Lachab, Mohamed ; Hao, Maosheng...
Japanese Journal of Applied Physics. 38 (1999) 2R - p. 631 , 1999

Link: https://doi.org/10.1143/..

7

Reactive Ion Etching of GaN and AlxGa1-xN Using Cl2/CH4/Ar ..:

Basak, Durga ; Yamashita, Kenji ; Sugahara, Tomoya...
Japanese Journal of Applied Physics. 38 (1999) 4S - p. 2646 , 1999

Link: https://doi.org/10.1143/..

8

Laser-Induced Damage Threshold and Surface Processing of Ga..:

Eliseev, Petr G. ; Sun, Hong-Bo ; Juodkazis, Saulius...
Japanese Journal of Applied Physics. 38 (1999) 7B - p. L839 , 1999

Link: https://doi.org/10.1143/..

9

Time-resolved spectroscopy of excitonic luminescence from G..:

Yamada, Yoichi ; Sasaki, Chiharu ; Kurai, Satoshi...
Journal of Applied Physics. 86 (1999) 12 - p. 7186-7188 , 1999

Link: https://doi.org/10.1063/..

10

Large Schottky barriers for Ni/p-GaN contacts:

Shiojima, Kenji ; Sugahara, Tomoya ; Sakai, Shiro
Applied Physics Letters. 74 (1999) 14 - p. 1936-1938 , 1999

Link: https://doi.org/10.1063/..

11

Selective Etching of GaN over AlxGa1-xN Using Reactive Ion ..:

Basak, Durga ; Yamashita, Kenji ; Sugahara, Tomoya...
Japanese Journal of Applied Physics. 38 (1999) 1R - p. 42 , 1999

Link: https://doi.org/10.1143/..

12

Growth of InNAs on GaAs(1 0 0) substrates by molecular-beam..:

Sakai, Shiro ; Cheng, Tin S ; Foxon, Thomas C...
Journal of Crystal Growth. 189-190 (1998) - p. 471-475 , 1998

Link: https://doi.org/10.1016/..

13

Lateral Overgrowth of Thick GaN on Patterned GaN Substrate ..:

Wang, Jie ; Tottori, Satoru ; Sato, Hisao...
Japanese Journal of Applied Physics. 37 (1998) 8R - p. 4475 , 1998

Link: https://doi.org/10.1143/..

14

Ohmic Contact to P-Type GaN:

Youn, Doo-Hyeb ; Hao, Maosheng ; Sato, Hisao...
Japanese Journal of Applied Physics. 37 (1998) 4R - p. 1768 , 1998

Link: https://doi.org/10.1143/..

15

Role of Dislocation in InGaN Phase Separation:

Sugahara, Tomoya ; Hao, Maosheng ; Wang, Tao...
Japanese Journal of Applied Physics. 37 (1998) 10B - p. L1195 , 1998

Link: https://doi.org/10.1143/..