Moutanabbir, O.
20  Ergebnisse:
Personensuche X
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2

Intra-pulse difference frequency generation in ZnGeP(2) for..:

Carnio, B. N ; Zhang, M ; Zawilski, K. T...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10199089/.  , 2023
 
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3

Short-wave infrared cavity resonances in a single GeSn nano..:

Kim, Y ; Assali, S ; Joo, H.-J...
https://eprints.whiterose.ac.uk/202248/1/s41467-023-40140-0.pdf.  , 2023
 
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5

Midinfrared Emission and Absorption in Strained and Relaxed..:

Assali, S ; Dijkstra, A ; Attiaoui, A...
Assali , S , Dijkstra , A , Attiaoui , A , Bouthillier , É , Haverkort , J E M & Moutanabbir , O 2021 , ' Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors ' , Physical Review Applied , vol. 15 , no. 2 , 024031 . https://doi.org/10.1103/PhysRevApplied.15.024031.  , 2021
 
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9

Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5..:

Assali, S ; Nicolas, J ; Mukherjee, S..
Assali , S , Nicolas , J , Mukherjee , S , Dijkstra , A & Moutanabbir , O 2018 , ' Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 μ m room-temperature optical emission ' , Applied Physics Letters , vol. 112 , no. 25 , 251903 . https://doi.org/10.1063/1.5038644.  , 2018
 
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12

Coherent X-ray diffraction imaging and characterization of ..:

Xiong, G ; Moutanabbir, O ; Reiche, M..
https://discovery.ucl.ac.uk/id/eprint/1465677/1/adma201304511.pdf.  , 2014
 
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13

Thermal transport through short-period SiGe nanodot superla..:

Chen, Peixuan ; Zhang, J. J ; Feser, J. P...
info:eu-repo/semantics/altIdentifier/wos/WOS:000331210800104.  , 2014
 
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15

Strained silicon on wafer level by wafer bonding: materials..:

Reiche, M ; Moutanabbir, O ; Himcinschi, C...
http://www.electrochem.org/dl/support/assets/crtf.pdf.  , 2008
 
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