E-LIB Suche - Ergebnisse für: Tapajna, Milan

1

Heteroepitaxial growth of Ga 2 O 3 on 4H-SiC by liquid-inje..:

Hrubišák, Fedor ; Hušeková, Kristína ; Zheng, Xiang...
Hrubišák , F , Hušeková , K , Zheng , X , Rosová , A , Dobročka , E , Ťapajna , M , Mičušík , M , Nádaždy , P , Egyenes , F , Keshtkar , J , Kováčová , E , Pomeroy , J W , Kuball , M & Gucmann , F 2023 , ' Heteroepitaxial growth of Ga 2 O 3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga 2 O 3 power devices ' , Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol. 41 , no. 4 , 042708 . https://doi.org/10.1116/6.0002649. , 2023

Link: https://hdl.handle.net/1..

2

Effect of the crystallographic c-axis orientation on the tr..:

Kozak, Andrii ; Sojkova, Michaela ; Gucmann, Filip...
http://arxiv.org/abs/2209.09128. , 2022

Link: http://arxiv.org/abs/220..

3

Electrical and magnetic properties of silicon carbide compo..:

Bystrický, Roman ; Škrátek, Martin ; Rusnák, Jaroslav...
info:eu-repo/grantAgreement/EC/H2020/810701/. , 2022

Link: https://zenodo.org/recor..

4

Effect of gate shaping and consequent process changes on Al..:

Moereke, Janina ; Tapajna, Milan ; Uren, Michael J...
Moereke , J , Tapajna , M , Uren , M J , Pei , Y , Mishra , U & Kuball , M H H 2012 , ' Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability ' , physica status solidi (a) , vol. 209 , no. 12 , pp. 2646-2652 . https://doi.org/10.1002/pssa.201228395. , 2012

Link: https://hdl.handle.net/1..

5

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGa..:

Palacios, Tomas ; Killat, Nicole ; Tapajna, Milan..
http://dx.doi.org/10.1049/el.2010.7540. , 2011

Link: http://hdl.handle.net/17..

6

Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposite..:

Edmund Dobročka ; Filip Gucmann ; Kristína Hušeková...
Electronic Materials. , 2022

Link: https://doi.org/10.3390/..

7

Structure and Thermal Stability of ε/κ-Ga 2 O 3 Films Depos..:

Edmund Dobročka ; Filip Gucmann ; Kristína Hušeková...
https://www.mdpi.com/1996-1944/16/1/20. , 2022

Link: https://doi.org/10.3390/..

8

Current Understanding of Bias-Temperature Instabilities in ..:

Milan Ťapajna
Inorganic Crystalline Materials. , 2020

Link: https://doi.org/10.3390/..

9

Current Understanding of Bias-Temperature Instabilities in ..:

Milan Ťapajna
https://www.mdpi.com/2073-4352/10/12/1153. , 2020

Link: https://doi.org/10.3390/..

10

Properties of the Si-SiO2 Interfaces in MOS Structures with..:

Ladislav Harmatha ; Peter Ballo ; Juraj Breza..
http://advances.utc.sk/index.php/AEEE/article/view/218. , 2006

Link: https://doaj.org/article..

11

Characterization of Unipolar Power Devices Technology:

Ladislav Harmatha ; Milan Tapajna ; Pavol Pisecny..
http://advances.utc.sk/index.php/AEEE/article/view/442. , 2004

Link: https://doaj.org/article..

12

Application of Open Circuit Voltage Decay to the Characteri..:

Milan Tapajna ; Jaroslav Pjencak ; Andrej Vrbicky..
http://advances.utc.sk/index.php/AEEE/article/view/432. , 2004

Link: https://doaj.org/article..

13

Characterization of High Energy Irradiated MOS Structures U..:

Pavol Pisecny ; Lubica Stuchlikova ; Ladislav Harmatha..
http://advances.utc.sk/index.php/AEEE/article/view/433. , 2004

Link: https://doaj.org/article..