Aabrar, Akif
20  Ergebnisse:
Personensuche X
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4

Analyzing Total-Ionizing-Dose Induced Memory Window Degrada..:

Woo, Sola ; Aabrar, Khandker Akif ; Datta, Suman.
IEEE Transactions on Device and Materials Reliability.  24 (2024)  1 - p. 84-88 , 2024
 
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5

Impact of Device Geometry, Physical Doping and Electrostati..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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6

Low-Frequency Noise Characteristics of Ferroelectric Field-..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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7

BEOL Compatible Oxide Power Transistors for On- Chip Voltag..:

, In: 2023 International Electron Devices Meeting (IEDM),
Deng, Sunbin ; Kwak, Jungyoun ; Lee, Junmo... - p. 1-4 , 2023
 
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10

On the Dopant, Defect States, and Mobility in W Doped Amorp..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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11

Cold-FeFET as Embedded Non-Volatile Memory with Unlimited C..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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12

Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectri..:

, In: 2022 International Electron Devices Meeting (IEDM),
 
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14

Theoretical and Empirical Insight into Dopant, Mobility and..:

, In: 2022 International Electron Devices Meeting (IEDM),
Hu, Yaoqiao ; Ye, Huacheng ; Aabrar, Khandker Akif... - p. 8.5.1-8.5.4 , 2022
 
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15

Characterization and Modeling of 22 nm FDSOI Cryogenic RF C..:

Chakraborty, Wriddhi ; Aabrar, Khandker Akif ; Gomez, Jorge...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.  7 (2021)  2 - p. 184-192 , 2021
 
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