Abbondanza, G.
101  Ergebnisse:
Personensuche X
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4

4H-SiC epitaxial layer growth by trichlorosilane (TCS):

La Via, F. ; Izzo, G. ; Mauceri, M....
Journal of Crystal Growth.  311 (2008)  1 - p. 107-113 , 2008
 
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7

In situ etch treatments of silicon carbide epitaxial layer ..:

Angelis, S. De ; Perrone, D. ; Scaltrito, L....
physica status solidi (a).  203 (2006)  9 - p. 2294-2297 , 2006
 
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9

4H SiC Epitaxial Growth with Chlorine Addition:

La Via, F. ; Galvagno, G. ; Foti, G....
Chemical Vapor Deposition.  12 (2006)  8-9 - p. 509-515 , 2006
 
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10

Horizontal hot wall reactor design for epi‐SiC growth:

Veneroni, A. ; Omarini, F. ; Masi, M....
Crystal Research and Technology.  40 (2005)  10-11 - p. 972-975 , 2005
 
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11

Infrared Spectra in Polarized Light and Vibrational Assignm..:

Califano, S. ; Abbondanza, G.
The Journal of Chemical Physics.  39 (1963)  4 - p. 1016-1023 , 1963
 
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13

Low dose aspirin and clinical outcomes in patients with SAR..:

Dalbeni, A. ; Susca, N. ; Daidone, M....
Internal and Emergency Medicine.  18 (2023)  8 - p. 2311-2319 , 2023
 
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