E-LIB Suche - Ergebnisse für: Acket, G. A.

1

Festkörperprobleme

In Referaten der Fachausschusses "Halbleiter" der Deutsche ... Festkörperprobleme ; Band 9

Acket, G. A. ; Folberth, O. G. ; Gebhardt, W.... - Reprint 2021 . , 2022

Link: https://doi.org/10.1515/..

2

Visible-Wavelength Laser Diodes:

, In: Semiconductor Lasers II,

Acket, G.A. ; Valster, A. ; Poel, C. J. van der - p. 1-69 , 1999

Link: https://doi.org/10.1016/..

3

Controlled Anodic Oxidation for High Precision Etch Depth i..:

Buda, M. ; Smalbrugge, E. ; Geluk, E.‐J....
Journal of The Electrochemical Society. 145 (1998) 3 - p. 1076-1079 , 1998

Link: https://doi.org/10.1149/..

4

Introduction to special issue on semiconductor lasers:

Acket, G.A.
Philips Journal of Research. 49 (1995) 3 - p. 183-185 , 1995

Link: https://doi.org/10.1016/..

5

Kink power in weakly index guided semiconductor lasers:

Schemmann, M. F. C. ; van der Poel, C. J. ; van Bakel, B. A. H....
Applied Physics Letters. 66 (1995) 8 - p. 920-922 , 1995

Link: https://doi.org/10.1063/..

6

Strained layer GaAs1−yPy-AlGaAs and InxGa1−xAs-AlGaAs quant..:

van der Poel, C. J. ; Ambrosius, H. P. M. M. ; Linders, R. W. M....
Applied Physics Letters. 63 (1993) 17 - p. 2312-2314 , 1993

Link: https://doi.org/10.1063/..

7

Al2O3 films for integrated optics:

Smit, M.K. ; Acket, G.A. ; van der Laan, C.J.
Thin Solid Films. 138 (1986) 2 - p. 171-181 , 1986

Link: https://doi.org/10.1016/..

8

Semiconductor injection lasers:

Acket, G.A ; Koelmans, H
Physics in Technology. 15 (1984) 2 - p. 67-72 , 1984

Link: https://doi.org/10.1088/..

9

Foreword to the special issue on semiconductor lasers:

Acket, G.
IEEE Journal of Quantum Electronics. 19 (1983) 6 - p. 897-897 , 1983

Link: https://doi.org/10.1109/..

10

Very narrow, shallow proton-implanted AlGaAs lasers for aud..:

Acket, G. ; Koelmans, H. ; van Ruyven, L.
IEEE Journal of Quantum Electronics. 17 (1981) 12 - p. 2520-2520 , 1981

Link: https://doi.org/10.1109/..

11

LPE growth and properties of GaP- (AlGa)As-GaAs heterostruc..:

van Oirschot, T. G. J. ; Acket, G. A. ; Bartels, W. J.
Journal of Applied Physics. 46 (1975) 5 - p. 1893-1900 , 1975

Link: https://doi.org/10.1063/..

12

Electron lifetime and diffusion constant in germanium-doped..:

Acket, G. A. ; Nijman, W. ; 't Lam, H.
Journal of Applied Physics. 45 (1974) 7 - p. 3033-3040 , 1974

Link: https://doi.org/10.1063/..

13

Relaxation oscillations and recombination in epitaxial N-ty..:

Acket, G.A. ; Scheer, J.J.
Solid-State Electronics. 14 (1971) 2 - p. 167-174 , 1971

Link: https://doi.org/10.1016/..

14

Physical Properties of Transferred-Electron and Avalanche M..:

, In: In Referaten des Fachausschusses "Halbleiterphysik" der Deutschen Physikalischen Gesellschaft München, 19. bis 22. März 1969 zugleich Hauptvorträge der Europäischen Tagung des IEEE: "Forschung auf dem Gebiet der Halbleiterbauelemente" München, 24. bis 27,

Acket, G. A. ; Vlaardingerbroek, M. T - p. 280-299 , 1969

Link: https://doi.org/10.1515/..

15

The low-temperature velocity-field characteristic of n-type..:

Acket, G.A. ; Lam, H.'T ; Heinle, W.
Physics Letters A. 29 (1969) 10 - p. 596-597 , 1969

Link: https://doi.org/10.1016/..