E-LIB Suche - Ergebnisse für: Adikimenakis, A.

1

The Critical Temperature of Superconducting Aluminum Films:

Arutyunov, K. Yu. ; Sedov, E. A. ; Zavialov, V. V....
Physics of Metals and Metallography. 124 (2023) 1 - p. 53-57 , 2023

Link: https://doi.org/10.1134/..

2

Substitutional synthesis of sub-nanometer InGaN/GaN quantum..:

Vasileiadis, I. G. ; Lymperakis, L. ; Adikimenakis, A....
Scientific Reports. 11 (2021) 1 - p. , 2021

Link: https://doi.org/10.1038/..

3

Experimental and modeling insight for fin-shaped transistor..:

Doundoulakis, G. ; Adikimenakis, A. ; Stavrinidis, A....
Solid-State Electronics. 158 (2019) - p. 1-10 , 2019

Link: https://doi.org/10.1016/..

4

Correlation of Threading Dislocations with the Electron Con..:

Adikimenakis, A. ; Chatzopoulou, P. ; Dimitrakopulos, G. P....
ECS Journal of Solid State Science and Technology. 9 (2019) 1 - p. 015006 , 2019

Link: https://doi.org/10.1149/..

5

Bandgap, electrical and structural properties of thick InN ..:

Adikimenakis, A. ; Androulidaki, M. ; Foundoulaki Salhin, E....
Journal of Physics: Conference Series. 1190 (2019) 1 - p. 012010 , 2019

Link: https://doi.org/10.1088/..

6

Current conduction mechanism and electrical break-down in I..:

Kuzmik, J. ; Fleury, C. ; Adikimenakis, A....
Applied Physics Letters. 110 (2017) 23 - p. , 2017

Link: https://doi.org/10.1063/..

7

Understanding the effects of Si (111) nitridation on the sp..:

Eftychis, S. ; Kruse, J. ; Koukoula, T....
Journal of Crystal Growth. 442 (2016) - p. 8-13 , 2016

Link: https://doi.org/10.1016/..

8

Selective-area growth of GaN nanowires on SiO2-masked Si (1..:

Kruse, J. E. ; Lymperakis, L. ; Eftychis, S....
Journal of Applied Physics. 119 (2016) 22 - p. , 2016

Link: https://doi.org/10.1063/..

9

In-situ SiNx/InN structures for InN field-effect transistor:

Zervos, Ch. ; Adikimenakis, A. ; Beleniotis, P....
Applied Physics Letters. 108 (2016) 14 - p. , 2016

Link: https://doi.org/10.1063/..

10

Analysis of current instabilities of thin AlN/GaN/AlN doubl..:

Zervos, Ch ; Adikimenakis, A ; Bairamis, A...
Semiconductor Science and Technology. 31 (2016) 6 - p. 065002 , 2016

Link: https://doi.org/10.1088/..

11

Direct spontaneous growth and interfacial structural proper..:

Adikimenakis, A. ; Lotsari, A. ; Dimitrakopulos, G. P....
Journal of Applied Physics. 117 (2015) 24 - p. , 2015

Link: https://doi.org/10.1063/..

12

GaN heterostructures with diamond and graphene:

Pécz, B ; Tóth, L ; Tsiakatouras, G...
Semiconductor Science and Technology. 30 (2015) 11 - p. 114001 , 2015

Link: https://doi.org/10.1088/..

13

Elimination of surface band bending on N-polar InN with thi..:

Kuzmík, J. ; Haščík, Š. ; Kučera, M....
Applied Physics Letters. 107 (2015) 19 - p. , 2015

Link: https://doi.org/10.1063/..

14

Electron density and currents of AlN/GaN high electron mobi..:

Bairamis, A. ; Zervos, Ch. ; Adikimenakis, A....
Applied Physics Letters. 105 (2014) 11 - p. 113508 , 2014

Link: https://doi.org/10.1063/..

15

Comparative study of AlN dielectric films' electrical prope..:

Koutsoureli, M. ; Adikimenakis, A. ; Michalas, L....
Microelectronic Engineering. 130 (2014) - p. 69-73 , 2014

Link: https://doi.org/10.1016/..