Agethen, M.
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3

InAlAs/InGaAs/InP heterostructures for RTD and HBT device a..:

Velling, P. ; Agethen, M. ; Prost, W..
Journal of Crystal Growth.  221 (2000)  1-4 - p. 722-729 , 2000
 
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4

Digital Circuit Design Based on the Resonant-Tunneling-Hete..:

, In: Proceedings of the 13th symposium on Integrated circuits and systems design,
Glosekotter, P. ; Pacha, C. ; Goser, K. F.... - p. 150 ff. , 2000
 
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5

LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid al..:

, In: Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362),
Veiling, P. ; Agethen, M. ; Herenda, E.... - p. 467,468,469,470 , 1999
 
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InGaP/GaAs hole barrier asymmetry determined by (002) X-ray..:

Velling, P. ; Janßen, G. ; Agethen, M...
Journal of Crystal Growth.  195 (1998)  1-4 - p. 117-123 , 1998
 
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