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Ahsan, Sheikh Aamir
165  Ergebnisse:
Personensuche X
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1

GaN trapping:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 129-141 , 2024
Link: https://doi.org/10.1016/..
 
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2

Terminal charges and capacitances:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 101-127 , 2024
Link: https://doi.org/10.1016/..
 
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3

GaN power device characterization:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 91-99 , 2024
Link: https://doi.org/10.1016/..
 
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4

RF modeling – II:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 203-228 , 2024
Link: https://doi.org/10.1016/..
 
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5

Modeling approaches for GaN HEMTs:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 27-45 , 2024
Link: https://doi.org/10.1016/..
 
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6

RF characterization of AlGaN/GaN HEMTs:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 145-177 , 2024
Link: https://doi.org/10.1016/..
 
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7

Model quality testing:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 235-238 , 2024
Link: https://doi.org/10.1016/..
 
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8

Noise and gate currents:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 71-87 , 2024
Link: https://doi.org/10.1016/..
 
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9

Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Phy..:

Bhat, Zarak ; Ahsan, Sheikh Aamir
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1687-1693 , 2024
Link: https://doi.org/10.1109/..
 
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10

RF modeling – I:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 179-202 , 2024
Link: https://doi.org/10.1016/..
 
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11

Self-heating and temperature effects:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 59-70 , 2024
Link: https://doi.org/10.1016/..
 
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12

Preface:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. xi-xii , 2024
Link: https://doi.org/10.1016/..
 
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13

A Comprehensive Model for Gate Current in E-Mode p-GaN HEMT:

Bhat, Zarak ; Ahsan, Sheikh Aamir
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1812-1819 , 2024
Link: https://doi.org/10.1109/..
 
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14

Surface potential, 2DEG, and the drain current model:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 49-57 , 2024
Link: https://doi.org/10.1016/..
 
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15

Parameter extraction:

, In: GaN Transistor Modeling for RF and Power Electronics,
Chauhan, Yogesh Singh ; Pampori, Ahtisham Ul Haq ; Ahsan, Sheikh Aamir - p. 231-234 , 2024
Link: https://doi.org/10.1016/..
 
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