E-LIB Suche - Ergebnisse für: Akita, Katsushi

1

Structural and electrical properties of InAs/GaSb superlatt..:

Arikata, Suguru ; Kyono, Takashi ; Miura, Kouhei...
physica status solidi (a). 214 (2017) 3 - p. , 2017

Link: https://doi.org/10.1002/..

2

Enhancement of two‐dimensional electron gases in AlGaN‐chan..:

Hashimoto, Shin ; Akita, Katsushi ; Yamamoto, Yoshiyuki...
physica status solidi (a). 209 (2012) 3 - p. 501-504 , 2012

Link: https://doi.org/10.1002/..

3

Superior DC and RF Performance of AlGaN-Channel HEMT at Hig..:

HATANO, Maiko ; YAFUNE, Norimasa ; TOKUDA, Hirokuni...
IEICE Transactions on Electronics. E95.C (2012) 8 - p. 1332-1336 , 2012

Link: https://doi.org/10.1587/..

4

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electro..:

Yafune, Norimasa ; Hashimoto, Shin ; Akita, Katsushi..
Japanese Journal of Applied Physics. 50 (2011) 10R - p. 100202 , 2011

Link: https://doi.org/10.1143/..

5

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electro..:

Yafune, Norimasa ; Hashimoto, Shin ; Akita, Katsushi..
Japanese Journal of Applied Physics. 50 (2011) 10R - p. 100202 , 2011

Link: https://doi.org/10.7567/..

6

High Al Composition AlGaN-Channel High-Electron-Mobility Tr..:

Tokuda, Hirokuni ; Hatano, Maiko ; Yafune, Norimasa...
Applied Physics Express. 3 (2010) 12 - p. 121003 , 2010

Link: https://doi.org/10.1143/..

7

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser..:

Yoshizumi, Yusuke ; Adachi, Masahiro ; Enya, Yohei...
Applied Physics Express. 2 (2009) 9 - p. 092101 , 2009

Link: https://doi.org/10.1143/..

8

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Pol..:

Enya, Yohei ; Yoshizumi, Yusuke ; Kyono, Takashi...
Applied Physics Express. 2 (2009) - p. 082101 , 2009

Link: https://doi.org/10.1143/..

9

Characteristics of InGaN light-emitting diodes on GaN subst..:

Akita, Katsushi ; Kyono, Takashi ; Yoshizumi, Yusuke..
physica status solidi (a). 204 (2007) 1 - p. 246-250 , 2007

Link: https://doi.org/10.1002/..

10

Improvements of external quantum efficiency of InGaN-based ..:

Akita, Katsushi ; Kyono, Takashi ; Yoshizumi, Yusuke..
Journal of Applied Physics. 101 (2007) 3 - p. , 2007

Link: https://doi.org/10.1063/..

11

High‐efficiency UV LEDs using quaternary InAlGaN:

Hirayama, Hideki ; Kyono, Takashi ; Akita, Katsushi..
Electrical Engineering in Japan. 157 (2006) 3 - p. 43-51 , 2006

Link: https://doi.org/10.1002/..

12

Influence of residual oxygen impurity in quaternary InAlGaN..:

Kyono, Takashi ; Hirayama, Hideki ; Akita, Katsushi...
Journal of Applied Physics. 99 (2006) 11 - p. , 2006

Link: https://doi.org/10.1063/..

13

Effects of In composition on ultraviolet emission efficienc..:

Kyono, Takashi ; Hirayama, Hideki ; Akita, Katsushi..
Journal of Applied Physics. 98 (2005) 11 - p. , 2005

Link: https://doi.org/10.1063/..

14

High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet..:

Hirayama, Hideki ; Akita, Katsushi ; Kyono, Takashi..
Japanese Journal of Applied Physics. 43 (2004) 10A - p. L1241-L1243 , 2004

Link: https://doi.org/10.1143/..

15

Advantages of GaN Substrates in InAlGaN Quaternary Ultravio..:

Akita, Katsushi ; Nakamura, Takao ; Hirayama, Hideki
Japanese Journal of Applied Physics. 43 (2004) 12 - p. 8030-8031 , 2004

Link: https://doi.org/10.1143/..