E-LIB Suche - Ergebnisse für: Alassaad, Kassem

1

Growth and Characterization of Undoped Polysilicon Thick La..:

Yeghoyan, Taguhi ; Alassaad, Kassem ; Soulière, Véronique...
Silicon. 12 (2019) 5 - p. 1187-1194 , 2019

Link: https://doi.org/10.1007/..

2

How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi‐Stack:

Yeghoyan, Taguhi ; Alassaad, Kassem ; Soulière, Véronique...
physica status solidi (a). 216 (2019) 10 - p. , 2019

Link: https://doi.org/10.1002/..

3

Nanodiamond Integration with Photonic Devices:

Radulaski, Marina ; Zhang, Jingyuan Linda ; Tzeng, Yan‐Kai...
Laser & Photonics Reviews. 13 (2019) 8 - p. , 2019

Link: https://doi.org/10.1002/..

4

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed:

Yeghoyan, Taguhi ; Alassaad, Kassem ; McMitchell, Sean R.C....
Materials Science Forum. 924 (2018) - p. 128-131 , 2018

Link: https://doi.org/10.4028/..

5

Silicon Deposition on 3C-SiC Seeds of Different Orientation:

Yeghoyan, Taguhi ; Alassaad, Kassem ; Soulière, Véronique.
Materials Science Forum. 897 (2017) - p. 87-90 , 2017

Link: https://doi.org/10.4028/..

6

Silicon deposition on 3C-SiC seeds of different orientation:

, In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM),

Yeghoyan, Taguhi ; Alassaad, Kassem ; Souliere, Veronique. - p. 1-1 , 2016

Link: https://doi.org/10.4028/..

7

3C-SiC Microdisks for Visible Photonics:

Radulaski, Marina ; Babinec, Thomas ; Zhang, Jing Yuan Linda...
Materials Science Forum. 858 (2016) - p. 711-714 , 2016

Link: https://doi.org/10.4028/..

8

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Ho..:

Salinaro, Alberto ; Alassaad, Kassem ; Peters, Dethard..
Materials Science Forum. 821-823 (2015) - p. 512-515 , 2015

Link: https://doi.org/10.4028/..

9

Understanding of the Growth Mechanism Leading to Twin Bound..:

Alassaad, Kassem ; Soulière, Véronique ; Cauwet, François...
Materials Science Forum. 821-823 (2015) - p. 209-212 , 2015

Link: https://doi.org/10.4028/..

10

Behavior and Chemical Reactions of Liquid Si and Ge on SiС ..:

Alassaad, Kassem ; Soulière, Véronique ; Cauwet, François..
Materials Science Forum. 821-823 (2015) - p. 121-124 , 2015

Link: https://doi.org/10.4028/..

11

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanis..:

Soulière, Véronique ; Alassaad, Kassem ; Cauwet, François...
Materials Science Forum. 821-823 (2015) - p. 115-120 , 2015

Link: https://doi.org/10.4028/..

12

Preliminary Study on the Effect of Micrometric Ge-Droplets ..:

Vivona, Marilena ; Giannazzo, Filippo ; Alassaad, Kassem...
Materials Science Forum. 821-823 (2015) - p. 424-427 , 2015

Link: https://doi.org/10.4028/..

13

On the Formation of Graphene by Ge Intercalation of a 4H-Si..:

Chandran, N. ; Sall, Mamour ; Arvanitidis, Jarvan...
Materials Science Forum. 821-823 (2015) - p. 961-964 , 2015

Link: https://doi.org/10.4028/..

14

Visible Photoluminescence from Cubic (3C) Silicon Carbide M..:

Radulaski, Marina ; Babinec, Thomas M. ; Müller, Kai...
ACS Photonics. 2 (2014) 1 - p. 14-19 , 2014

Link: https://doi.org/10.1021/..

15

Ge incorporation inside 4H-SiC during homoepitaxial growth ..:

Alassaad, Kassem ; Soulière, Véronique ; Cauwet, François...
Acta Materialia. 75 (2014) - p. 219-226 , 2014

Link: https://doi.org/10.1016/..