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Albahrani, Sayed A.
41  Ergebnisse:
Personensuche X
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1

Friction mechanisms of Ni-based and Zr-based bulk metallic ..:

Zhou, Zhijian ; Albahrani, Sayed ; Ren, Yue...
Tribology International.  197 (2024)  - p. 109763 , 2024
Link: https://doi.org/10.1016/..
 
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2

Study of self-heating in GaAs pHEMTs using pulsed I-V Analy..:

, In: 81st ARFTG Microwave Measurement Conference,
Schwitter, Bryan ; Albahrani, Sayed A. ; Parker, Anthony.. - p. 1-6 , 2013
Link: https://doi.org/10.1109/..
 
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3

Characterizing drain current dispersion in GaN HEMTs with a..:

, In: 2009 European Microwave Conference (EuMC),
Albahrani, Sayed A. ; Rathmell, James G. ; Parker, Anthony E. - p. None , 2009
Link: https://doi.org/10.23919..
 
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4

Accurate Modelling of GaN HEMT Capacitances in the Framewor..:

, In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC),
Albahrani, Sayed Ali ; Schwantuschke, Dirk ; Khandelwal, Sourabh - p. 1-4 , 2023
Link: https://doi.org/10.23919..
 
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5

Extreme Temperature Modeling of AlGaN/GaN HEMTs:

Albahrani, Sayed Ali ; Mahajan, Dhawal ; Kargarrazi, Saleh...
IEEE Transactions on Electron Devices.  67 (2020)  2 - p. 430-437 , 2020
Link: https://doi.org/10.1109/..
 
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6

Validation of the Industry-Standard ASM-GaN Model for Gate-..:

, In: 2020 4th Australian Microwave Symposium (AMS),
Albahrani, Sayed Ali ; Hodges, Jason ; Heuken, Lars... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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7

Consistent Surface-Potential-Based Modeling of Drain and Ga..:

Albahrani, Sayed Ali ; Heuken, Lars ; Schwantuschke, Dirk...
IEEE Transactions on Electron Devices.  67 (2020)  2 - p. 455-462 , 2020
Link: https://doi.org/10.1109/..
 
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8

A Computationally Efficient Modelling Methodology for Field..:

, In: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Hodges, Jason ; Albahrani, Sayed Ali ; Khandelwal, Sourabh - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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9

Design methodology considering evolution of statistical cor..:

Eslahi, Hossein ; Mahajan, Dhawal ; Albahrani, Sayed Ali.
Microelectronics Journal.  91 (2019)  - p. 36-41 , 2019
Link: https://doi.org/10.1016/..
 
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10

A Study of Hard Switching Characteristics of GaN-based DC-D..:

, In: 2018 Australasian Universities Power Engineering Conference (AUPEC),
Mahajan, Dhawal ; Albahrani, Sayed Ali ; Eslahi, Hossein. - p. 1-4 , 2018
Link: https://doi.org/10.1109/..
 
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11

Non-Isolated, ZCT, High Step-UP, DC-DC Converter for PV Sys..:

, In: 2018 Australasian Universities Power Engineering Conference (AUPEC),
Sadeghpour, Danial ; Davoodi, Amirali ; Mahajan, Dhawal... - p. 1-6 , 2018
Link: https://doi.org/10.1109/..
 
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12

Circuit Model for Double-Energy-Level Trap Centers in GaN H..:

Albahrani, Sayed Ali ; Parker, Anthony ; Heimlich, Michael
IEEE Transactions on Electron Devices.  64 (2017)  3 - p. 998-1006 , 2017
Link: https://doi.org/10.1109/..
 
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13

Circuit model for single-energy-level trap centers in FETs:

Albahrani, Sayed Ali ; Parker, Anthony ; Heimlich, Michael
Solid-State Electronics.  126 (2016)  - p. 143-151 , 2016
Link: https://doi.org/10.1016/..
 
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14

Identifying a Double-Energy-Level Trap Center in a GaN HEMT..:

Albahrani, Sayed Ali ; Parker, Anthony E. ; Heimlich, Michael
IEEE Transactions on Electron Devices.  63 (2016)  9 - p. 3693-3699 , 2016
Link: https://doi.org/10.1109/..
 
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15

Modelling of elastoplastic, multi-scale and multi-contact p..:

Albahrani, Sayed Mohamed Baqer ; Alves, Joël Teixeira ; Duval, Arnaud...
Mechanics & Industry.  23 (2022)  - p. 6 , 2022
Link: https://doi.org/10.1051/..
 
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