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Aleksandrov, O. V.
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Physica status solidi 

Volume 110, Number 2: December 16  Physica status solidi ; Volume 110, Number 2, A
Albornóz, J. G ; Aleksandrov, O. V ; Ameziahe, A... - Reprint 2021 . , [2021]
Link: https://doi.org/10.1515/..
 
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EPM '89: 3rd International Conference on Energy Pulse and P.. 

Physical Research ; 13
Ageev, V ; Akchulakov, M. T ; Albert, M... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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Physica status solidi / A 

Volume 110, Number 2, December 16  Physica status solidi / A ; Volume 110, Number 2
Alboknóz, J. G. ; Aleksandrov, O. V. ; Ameziane, A.... - Reprint 2021 . , 2022
Link: https://doi.org/10.1515/..
 
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The Effect of Ionizing Irradiation on the Charge Distributi..:

Aleksandrov, O. V. ; Tyapkin, N. S. ; Mokrushina, S. A..
Semiconductors.  56 (2022)  3 - p. 160-163 , 2022
Link: https://doi.org/10.1134/..
 
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On the Size Effect in MOS Structures under Ionizing Irradia..:

Aleksandrov, O. V.
Semiconductors.  56 (2022)  4 - p. 241-245 , 2022
Link: https://doi.org/10.1134/..
 
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The Effect of the Ionizing Radiation Intensity on the Respo..:

Aleksandrov, O. V.
Semiconductors.  55 (2021)  2 - p. 207-213 , 2021
Link: https://doi.org/10.1134/..
 
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7

Latent Accumulation of Surface States in MOS Structures aft..:

Aleksandrov, O. V.
Semiconductors.  55 (2021)  6 - p. 578-582 , 2021
Link: https://doi.org/10.1134/..
 
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8

Dispersive Transport of Hydrogen in MOS Structures after Ex..:

Aleksandrov, O. V.
Semiconductors.  54 (2020)  10 - p. 1215-1219 , 2020
Link: https://doi.org/10.1134/..
 
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9

Model of the Effect of the Gate Bias on MOS Structures unde..:

Aleksandrov, O. V. ; Mokrushina, S. A.
Semiconductors.  54 (2020)  2 - p. 240-245 , 2020
Link: https://doi.org/10.1134/..
 
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10

Model of the Negative-Bias Temperature Instability of p-MOS..:

Aleksandrov, O. V.
Semiconductors.  54 (2020)  2 - p. 233-239 , 2020
Link: https://doi.org/10.1134/..
 
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11

Influence of Annealing Temperature on Electrically Active C..:

Sobolev, N. A. ; Aleksandrov, O. V. ; Sakharov, V. I....
Semiconductors.  53 (2019)  2 - p. 153-155 , 2019
Link: https://doi.org/10.1134/..
 
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Model for Charge Accumulation in n- and p-MOS Transistors d..:

Aleksandrov, O. V. ; Mokrushina, S. A.
Semiconductors.  52 (2018)  6 - p. 783-788 , 2018
Link: https://doi.org/10.1134/..
 
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High-Temperature Annealing as a Method for the Silicon Nano..:

Ivanova, E. V. ; Dementev, P. A. ; Sitnikova, A. A...
Journal of Electronic Materials.  47 (2018)  7 - p. 3969-3973 , 2018
Link: https://doi.org/10.1007/..
 
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Charge Accumulation in MOS Structures with a Polysilicon Ga..:

Aleksandrov, O. V. ; Ageev, A. N. ; Zolotarev, S. I.
Semiconductors.  52 (2018)  13 - p. 1732-1737 , 2018
Link: https://doi.org/10.1134/..
 
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Influence of traps in silicon dioxide on the breakdown of M..:

Aleksandrov, O. V.
Semiconductors.  51 (2017)  8 - p. 1062-1066 , 2017
Link: https://doi.org/10.1134/..
 
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