Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Alian, A.
1318  Ergebnisse:
Personensuche X
?
1

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
O'Sullivan, B. J. ; Alian, A. ; Sibaja-Hernandez, A.... - p. 1-9 , 2024
Link: https://doi.org/10.1109/..
 
?
2

High Performance mm Wave AlN/GaN MISHEMTs on 200 mm Si Subs..:

, In: 2023 International Electron Devices Meeting (IEDM),
Yadav, S. ; Alian, A. ; ElKashlan, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
3

Charge Movement in Back Barrier Induced Time-Dependent On-S..:

, In: 2023 International Electron Devices Meeting (IEDM),
Yu, Hao ; Fang, J. ; Vermeersch, B.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
4

III-V/III-N technologies for next generation high-capacity ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 11.5.1-11.5.4 , 2022
Link: https://doi.org/10.1109/..
 
?
5

Understanding the factors affecting contact resistance in n..:

Ramesh, S. ; Ivanov, Ts. ; Sibaja-Hernandez, A....
Journal of Applied Physics.  132 (2022)  2 - p. , 2022
Link: https://doi.org/10.1063/..
 
?
6

Back Barrier Trapping Induced Resistance Dispersion in GaN ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Yu, Hao ; Parvais, B. ; Peralagu, U.... - p. 30.6.1-30.6.4 , 2022
Link: https://doi.org/10.1109/..
 
?
7

Comprehensive Investigations of HBM ESD Robustness for GaN-..:

, In: 2022 International Electron Devices Meeting (IEDM),
Abhinay, S. ; Wu, W.-M. ; Shih, C.-A.... - p. 30.7.1-30.7.4 , 2022
Link: https://doi.org/10.1109/..
 
?
8

On the impact of buffer and GaN-channel thickness on curren..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Putcha, V. ; Cheng, L. ; Alian, A.... - p. 1-8 , 2021
Link: https://doi.org/10.1109/..
 
?
9

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Wu, W.-M. ; Chen, S.-H. ; Sibaja-Hernandez, A.... - p. 39.5.1-39.5.4 , 2021
Link: https://doi.org/10.1109/..
 
?
10

Exploring the DC reliability metrics for scaled GaN-on-Si d..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Putcha, V. ; Bury, E. ; Franco, J.... - p. 1-8 , 2020
Link: https://doi.org/10.1109/..
 
?
11

Erratum: Electrical Activity of Extended Defects in Relaxed..:

Claeys, C. ; Hsu, P.-C. ; Mols, Y....
ECS Journal of Solid State Science and Technology.  9 (2020)  3 - p. 039002 , 2020
Link: https://doi.org/10.1149/..
 
?
12

Electrical Activity of Extended Defects in Relaxed InxGa1−x..:

Claeys, C. ; Hsu, P.-C. ; Mols, Y....
ECS Journal of Solid State Science and Technology.  9 (2020)  3 - p. 033001 , 2020
Link: https://doi.org/10.1149/..
 
?
13

Making the case to acquire a transthoracic echocardiogram p..:

Gonzalez Fiol, A. ; Elder, R.W. ; Chou, J.C...
International Journal of Obstetric Anesthesia.  41 (2020)  - p. 127-128 , 2020
Link: https://doi.org/10.1016/..
 
?
14

From 5G to 6G: will compound semiconductors make the differ..:

, In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
?
15

CMOS-compatible GaN-based devices on 200mm-Si for RF applic..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Peralagu, U. ; De Jaeger, B. ; Fleetwood, D. M.... - p. 17.2.1-17.2.4 , 2019
Link: https://doi.org/10.1109/..
 
1-15