E-LIB Suche - Ergebnisse für: Allerman, Andrew A.

1

Optimization of Step-Etched Junction Termination Extensions..:

Binder, Andrew T. ; Steinfeldt, Jeffrey ; Allerman, Andrew A....
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1541-1545 , 2024

Link: https://doi.org/10.1109/..

2

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers ..:

Klein, Brianna ; Allerman, Andrew ; Armstrong, Andrew...
Advanced Materials Interfaces. , 2024

Link: https://doi.org/10.1002/..

3

Design and demonstration of efficient transparent 30% Al-co..:

Dominic Merwin Xavier, Agnes Maneesha ; Ghosh, Arnob ; Rahman, Sheikh Ifatur...
Applied Physics Letters. 122 (2023) 8 - p. , 2023

Link: https://doi.org/10.1063/..

4

Etch Depth Study for Step-Etched Junction Termination Exten..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),

Binder, Andrew T. ; Steinfeldt, Jeffrey ; Allerman, Andrew A.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

5

Low voltage drop AlGaN UV-A laser structures with transpare..:

Ghosh, Arnob ; Dominic Merwin Xavier, Agnes Maneesha ; Hasan, Syed M N...
Journal of Physics D: Applied Physics. 57 (2023) 3 - p. 035105 , 2023

Link: https://doi.org/10.1088/..

6

Origins of epitaxial macro-terraces and macro-steps on GaN ..:

Liao, Michael E. ; Olsen, William L. ; Huynh, Kenny...
Journal of Applied Physics. 133 (2023) 18 - p. , 2023

Link: https://doi.org/10.1063/..

7

Gate protection for vertical gallium nitride trench MOSFETs..:

Binder, Andrew T. ; Cooper, James A. ; Steinfeldt, Jeffrey...
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 5 (2023) - p. 100218 , 2023

Link: https://doi.org/10.1016/..

8

Multi-active region AlGaN UV LEDs with transparent tunnel j..:

Dominic Merwin Xavier, Agnes Maneesha ; Ghosh, Arnob ; Rahman, Sheikh Ifatur...
Applied Physics Express. 16 (2023) 8 - p. 082001 , 2023

Link: https://doi.org/10.35848..

9

Correlative Electron Energy-Loss Spectroscopy Bandgap Mappi..:

Deitz, Julia I ; Sugar, Joshua D ; Kiefer, Boris...
Microscopy and Microanalysis. 28 (2022) S1 - p. 2010-2011 , 2022

Link: https://doi.org/10.1017/..

10

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Volta..:

Armstrong, Andrew M. ; Allerman, Andrew A. ; Pickrell, Greg W....
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 318-323 , 2021

Link: https://doi.org/10.1109/..

11

Identification of Star Defects in Gallium Nitride with HREB..:

Ruggles, Timothy J. ; Deitz, Julia I. ; Allerman, Andrew A...
Microscopy and Microanalysis. 27 (2021) 2 - p. 257-265 , 2021

Link: https://doi.org/10.1017/..

12

Defect analysis of star defects in GaN thin films grown on ..:

Ruggles, Tim ; Deitz, Julia ; Allerman, Andrew..
Microscopy and Microanalysis. 27 (2021) S1 - p. 916-917 , 2021

Link: https://doi.org/10.1017/..

13

High-resolution planar electron beam induced current in bul..:

Warecki, Zoey ; Allerman, Andrew A. ; Armstrong, Andrew M...
Applied Physics Letters. 119 (2021) 1 - p. , 2021

Link: https://doi.org/10.1063/..

14

Selective area regrowth and doping for vertical gallium nit..:

Fu, Houqiang ; Fu, Kai ; Yang, Chen...
Materials Today. 49 (2021) - p. 296-323 , 2021

Link: https://doi.org/10.1016/..

15

The Structural Evolution of Dot-Core GaN Substrates with An..:

Liao, Michael Evan ; Huynh, Kenny ; Wang, Yekan..
ECS Transactions. 98 (2020) 6 - p. 15-20 , 2020

Link: https://doi.org/10.1149/..