Almpanis, Ioannis
22  Ergebnisse:
Personensuche X
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1

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedn..:

Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul...
IEEE Transactions on Industry Applications.  60 (2024)  3 - p. 4251-4263 , 2024
 
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2

Datasheet Based SiC MOSFET Models for Accurate Switching Wa..:

, In: 2023 IEEE Design Methodologies Conference (DMC),
 
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4

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and..:

, In: 2023 IEEE Design Methodologies Conference (DMC),
Almpanis, Ioannis ; Evans, Paul ; Li, Ke. - p. 1-6 , 2023
 
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5

Short-Circuit Performance Investigation of 10kV+ Rated SiC ..:

, In: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe),
 
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6

Influence of Emitter Side Design on the Unintentional Turn-..:

, In: 2022 IEEE Energy Conversion Congress and Exposition (ECCE),
 
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7

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedn..:

Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul...
https://nottingham-repository.worktribe.com/output/30412147.  , 2024
 
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8

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and..:

Almpanis, Ioannis ; Evans, Paul ; Li, Ke.
https://nottingham-repository.worktribe.com/output/31435415.  , 2023
 
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9

10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approa..:

Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina...
https://nottingham-repository.worktribe.com/output/13177470.  , 2023
 
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10

Influence of Emitter Side Design on the Unintentional Turn-..:

Almpanis, Ioannis ; Empringham, Lee ; Mawby, Philip...
https://nottingham-repository.worktribe.com/output/10909127.  , 2022
 
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11

Short-Circuit Performance Investigation of 10kV+ Rated SiC ..:

Almpanis, Ioannis ; Gammon, Peter ; Mawby, Philip...
https://nottingham-repository.worktribe.com/output/10909073.  , 2022
 
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