E-LIB Suche - Ergebnisse für: Ambacher, Oliver

1

Understanding Interfaces in AlScN/GaN Heterostructures:

Streicher, Isabel ; Leone, Stefano ; Zhang, Meiling...
Advanced Functional Materials. , 2024

Link: https://doi.org/10.1002/..

2

Influence of growth temperature on the properties of alumin..:

Sundarapandian, Balasubramanian ; Yassine, Ali ; Kirste, Lutz...
Journal of Applied Physics. 134 (2023) 18 - p. , 2023

Link: https://doi.org/10.1063/..

3

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostru..:

Streicher, Isabel ; Leone, Stefano ; Manz, Christian...
Crystal Growth & Design. 23 (2023) 2 - p. 782-791 , 2023

Link: https://doi.org/10.1021/..

4

Defect Location in Laterally Aligned Tin Oxide Nanowires: T..:

Bürger, Jasmin-Clara ; Gutsch, Sebastian ; Wollersen, Vanessa...
The Journal of Physical Chemistry C. 127 (2023) 22 - p. 10871-10877 , 2023

Link: https://doi.org/10.1021/..

5

Power Module Design for GaN Transistors Enabling High Switc..:

Wöhrle, Dennis ; Burger, Bruno ; Ambacher, Oliver
Energy Technology. 11 (2023) 12 - p. , 2023

Link: https://doi.org/10.1002/..

6

A Scalable Small-Signal and Noise Model for High-Electron-M..:

Heinz, Felix ; Thome, Fabian ; Schwantuschke, Dirk..
IEEE Transactions on Microwave Theory and Techniques. 70 (2022) 2 - p. 1097-1110 , 2022

Link: https://doi.org/10.1109/..

7

Leakage mechanism in Alx Ga1−x N/GaN heterostructures with ..:

Köhler, Klaus ; Pletschen, Wilfried ; Kirste, Lutz...
Semiconductor Science and Technology. 37 (2022) 2 - p. 025016 , 2022

Link: https://doi.org/10.1088/..

8

Enhanced AlScN/GaN Heterostructures Grown with a Novel Prec..:

Streicher, Isabel ; Leone, Stefano ; Kirste, Lutz...
physica status solidi (RRL) – Rapid Research Letters. 17 (2022) 2 - p. , 2022

Link: https://doi.org/10.1002/..

9

A Cryogenic On-Chip Noise Measurement Procedure With ±1.4-K..:

, In: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,

Heinz, Felix ; Thome, Fabian ; Leuther, Arnulf. - p. 233-236 , 2022

Link: https://doi.org/10.1109/..

10

Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficie..:

Langer, Julia ; Cimalla, Volker ; Lebedev, Vadim...
physica status solidi (a). 219 (2022) 10 - p. , 2022

Link: https://doi.org/10.1002/..

11

On the origin of the turn-on voltage drop of GaN-based curr..:

Döring, Philipp ; Sinnwell, Matthias ; Reiner, Richard...
Journal of Applied Physics. 131 (2022) 11 - p. , 2022

Link: https://doi.org/10.1063/..

12

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized f..:

Heinz, Felix ; Thome, Fabian ; Leuther, Arnulf.
IEEE Transactions on Microwave Theory and Techniques. 69 (2021) 8 - p. 3896-3907 , 2021

Link: https://doi.org/10.1109/..

13

Metal organic chemical vapour deposition regrown large area..:

Doering, Philipp ; Driad, Rachid ; Reiner, Richard...
Electronics Letters. 57 (2021) 3 - p. 145-147 , 2021

Link: https://doi.org/10.1049/..

14

Low-Power Differential Input to Single-Ended Output GaN RF-..:

Weis, Markus ; Friesicke, Christian ; Quay, Rudiger.
IEEE Transactions on Microwave Theory and Techniques. 69 (2021) 3 - p. 1646-1653 , 2021

Link: https://doi.org/10.1109/..

15

Technology of GaN-Based Large Area CAVETs With Co-Integrate..:

Doring, Philipp ; Driad, Rachid ; Reiner, Richard...
IEEE Transactions on Electron Devices. 68 (2021) 11 - p. 5547-5552 , 2021

Link: https://doi.org/10.1109/..