E-LIB Suche - Ergebnisse für: Anwar, Abdur-Rehman

1

Compositionally graded quaternary electron blocking layer f..:

Usman, Muhammad ; Malik, Shahzeb ; Hussain, Masroor...
Optical Review. 29 (2022) 6 - p. 498-503 , 2022

2

Physical and technological analysis of the AlGaN-based UVC-..:

Solís-Cisneros, Horacio ; Hernández-Gutiérrez, Carlos Alberto ; Anwar, Abdur-Rehman...
Revista Mexicana de Física. 68 (2022) 2 Mar-Apr - p. , 2022

Link: https://doi.org/10.31349..

3

Theoretical and Computational Analysis of a Wurtzite-AlGaN ..:

Solís-Cisneros, Horacio I. ; Hu, Yaoqiao ; Camas-Anzueto, Jorge L....
Nanomaterials. 12 (2022) 23 - p. 4347 , 2022

Link: https://doi.org/10.3390/..

4

Engineering last quantum barrier/electron blocking layer in..:

Munsif, Munaza ; Usman, Muhammad ; Anwar, Abdur-Rehman...
Optical and Quantum Electronics. 53 (2021) 11 - p. , 2021

Link: https://doi.org/10.1007/..

5

Reduction of efficiency droop by inserting superlattice qua..:

Anwar, Abdur-Rehman ; Usman, Muhammad ; Munsif, Munaza.
Materials Science and Engineering: B. 271 (2021) - p. 115279 , 2021

Link: https://doi.org/10.1016/..

6

Analysis of various electron blocking layers to improve eff..:

Usman, Muhammad ; Anwar, Abdur-Rehman ; Saba, Kiran.
Ceramics International. 46 (2020) 11 - p. 18464-18468 , 2020

Link: https://doi.org/10.1016/..

7

Green gap in GaN-based light-emitting diodes: in perspectiv:

Usman, Muhammad ; Munsif, Munaza ; Mushtaq, Urooj..
Critical Reviews in Solid State and Materials Sciences. 46 (2020) 5 - p. 450-467 , 2020

Link: https://doi.org/10.1080/..

8

Review—A Survey of Simulations on Device Engineering of GaN..:

Usman, Muhammad ; Anwar, Abdur-Rehman ; Munsif, Munaza
ECS Journal of Solid State Science and Technology. 9 (2020) 6 - p. 066002 , 2020

Link: https://doi.org/10.1149/..

9

Thickness-graded quantum barriers and composition-graded el..:

Usman, Muhammad ; Anwar, Abdur-Rehman ; Saba, Kiran.
Optik. 215 (2020) - p. 164767 , 2020

Link: https://doi.org/10.1016/..

10

Reduction in efficiency droop/decline of green GaN-based li..:

Usman, Muhammad ; Anwar, Abdur-Rehman ; Saba, Kiran..
Materials Science and Engineering: B. 258 (2020) - p. 114576 , 2020

Link: https://doi.org/10.1016/..

11

Wedge-shaped electron blocking layer to improve hole transp..:

Usman, Muhammad ; Munsif, Munaza ; Anwar, Abdur-Rehman
Optics Communications. 464 (2020) - p. 125493 , 2020

Link: https://doi.org/10.1016/..

12

Increasing the internal quantum efficiency of green GaN-bas..:

Usman, Muhammad ; Anwar, Abdur-Rehman ; Munsif, Munaza...
Optical and Quantum Electronics. 52 (2020) 6 - p. , 2020

Link: https://doi.org/10.1007/..

13

Droop-free internal quantum efficiency of p-InGaN/p-GaN sup..:

Usman, Muhammad ; Anwar, Abdur-Rehman ; Saba, Kiran.
Optik. 223 (2020) - p. 165514 , 2020

Link: https://doi.org/10.1016/..

14

High internal quantum efficiency of green GaN-based light-e..:

Usman, Muhammad ; Munsif, Munaza ; Anwar, Abdur-Rehman
Optical and Quantum Electronics. 52 (2020) 6 - p. , 2020

Link: https://doi.org/10.1007/..

15

Quantum efficiency enhancement by employing specially desig..:

Usman, Muhammad ; Munsif, Munaza ; Anwar, Abdur-Rehman...
Superlattices and Microstructures. 139 (2020) - p. 106417 , 2020

Link: https://doi.org/10.1016/..