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Arimura, H.
363  Ergebnisse:
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1

Side and Corner Region Non-Uniformities in Grown SiO2 and T..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Bastos, J. P. ; O'Sullivan, B. J. ; Higashi, Y.... - p. P36.PI-1-P36.PI-7 , 2024
Link: https://doi.org/10.1109/..
 
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2

Towards Improved Nanosheet-Based Complementary Field Effect..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Chiarella, T. ; Matagne, P. ; Mertens, H.... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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3

Compact thermally stable high voltage FinFET with 40 nm tox..:

Spessot, A. ; Matagne, P. ; Arimura, H....
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 03SP12 , 2024
Link: https://doi.org/10.35848..
 
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4

Characterization and Advanced Modeling of Dielectric Defect..:

Asanovski, R. ; Arimura, H. ; de Marneffe, J.-F....
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1745-1751 , 2024
Link: https://doi.org/10.1109/..
 
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5

Impact of work function metal stacks on the performance and..:

Franco, J. ; Arimura, H. ; Brus, S....
Solid-State Electronics.  216 (2024)  - p. 108929 , 2024
Link: https://doi.org/10.1016/..
 
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6

Molybdenum Nitride as a Scalable and Thermally Stable pWFM ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Arimura, H. ; Brus, S. ; Franco, J.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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7

Backside Power Delivery: Game Changer and Key Enabler of Ad..:

, In: 2023 International Electron Devices Meeting (IEDM),
Veloso, A. ; Vermeersch, B. ; Chen, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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8

Novel Low Thermal Budget CMOS RMG: Performance and Reliabil..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Franco, J. ; Arimura, H. ; de Marneffe, J.-F.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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9

Novel Low Thermal Budget CMOS RMG: Performance and Reliabil..:

Franco, J. ; Arimura, H. ; de Marneffe, J.-F....
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6658-6664 , 2023
Link: https://doi.org/10.1109/..
 
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10

Low thermal budget PBTI and NBTI reliability solutions for ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; De Marneffe, J.-F.... - p. 30.4.1-30.4.4 , 2022
Link: https://doi.org/10.1109/..
 
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11

Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Perfor..:

Bufler, F. M. ; Arimura, H. ; Favia, P....
IEEE Transactions on Electron Devices.  69 (2022)  11 - p. 6384-6387 , 2022
Link: https://doi.org/10.1109/..
 
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12

Insights into Scaled Logic Devices Connected from Both Wafe..:

, In: 2022 International Electron Devices Meeting (IEDM),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 23.3.1-23.3.4 , 2022
Link: https://doi.org/10.1109/..
 
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13

FinFETs with Thermally Stable RMG Gate Stack for Future DRA..:

, In: 2022 International Electron Devices Meeting (IEDM),
Capogreco, E. ; Arimura, H. ; Ritzenthaler, R.... - p. 26.2.1-26.2.4 , 2022
Link: https://doi.org/10.1109/..
 
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14

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacki..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vandooren, A. ; Parihar, N. ; Franco, J.... - p. 330-331 , 2022
Link: https://doi.org/10.1109/..
 
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15

High Performance Thermally Resistant FinFETs DRAM Periphera..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Ritzenthaler, R. ; Capogreco, E. ; Dupuy, E.... - p. 306-307 , 2022
Link: https://doi.org/10.1109/..
 
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